參數(shù)資料
型號(hào)： IDT70V9079L7PF
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： HIGH-SPEED 3.3V 64/32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM
中文描述： 32K X 8 DUAL-PORT SRAM, 18 ns, PQFP100
封裝： 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
文件頁(yè)數(shù)： 4/19頁(yè)
文件大?。?/td> 332K
代理商： IDT70V9079L7PF
6.42
IDT70V9089/79S/L
High Speed 3.3V 64/32K x 8 Synchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
(1)
Ambient
Temperature
GND
V
DD
Recommended DC Operating
Conditions
Symbol
Parameter
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
DD
+0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM
> V
DD
+ 0.3V.
3. Ambient Temperature Under Bias. Chip Deselected.
Absolute Maximum Ratings
(1)
Symbol
Rating
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. C
OUT
also references C
I/O
.
Capacitance
(T
A
= +25°C, f = 1.0MH
z
)
Symbol
Parameter
(1)
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
NOTES:
1. V
TERM
must not exceed V
DD
+0.3V.
2. V
IL
> -1.5V for pulse width less than 10ns.
Grade
Commercial
0
O
C to +70
O
C
0V
3.3V
+
0.3V
Industrial
-40
O
C to +85
O
C
0V
3.3V
+
0.3V
3750 tbl 04
Min.
Typ.
Max.
Unit
V
DD
Supply Voltage
3.0
3.3
3.6
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
____
V
DD
+ 0.3V
(1)
V
V
IL
Input Low Voltage
-0.3
(2)
____
0.8
V
3750 tbl 05
Commercial
& Industrial
Unit
V
TERM
(2)
Terminal Voltage
with Respect
to GND
-0.5 to +4.6
V
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage Temperature
-65 to +150
o
C
T
JN
Junction Temperature
+150
o
C
I
OUT
DC Output Current
50
mA
3750 tbl 06
Conditions
(2)
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
9
pF
C
OUT
(3)
Output Capacitance
V
OUT
= 3dV
10
pF
3750 tbl 07
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IDT70V9079L7PFG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 7.5NS 100TQFP
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