參數(shù)資料
型號(hào): IDT70V9279L12PRF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
中文描述: 32K X 16 DUAL-PORT SRAM, 25 ns, PQFP128
封裝: 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128
文件頁數(shù): 14/19頁
文件大?。?/td> 337K
代理商: IDT70V9279L12PRF
6.42
IDT70V9279/69S/L
High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Flow-Through Read-to-Write-to-Read (
OE
= V
IL
)
(3)
t
CYC1
14
Timing Waveform of Flow-Through Read-to-Write-to-Read (
OE
Controlled)
(3)
t
CYC1
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
3.
CE
0
,
UB
,
LB
, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
CNTRST
= V
IH
.
4. Addresses do not have to be accessed sequentially since
ADS
= V
IL
constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
R/
W
ADDRESS
An
An +1
An + 2
An + 2
An + 3
An + 4
DATA
IN
Dn + 2
CE
0
CLK
3743 drw 12
Qn
DATA
OUT
CE
1
UB
,
LB
t
CD1
Qn + 1
t
CH1
t
CL1
t
SD
t
HD
t
CD1
t
CD1
t
DC
t
CKHZ
NOP
Qn + 3
(1)
t
CD1
t
DC
t
SC
t
HC
t
SB
t
HB
t
SW
t
HW
t
SA
t
HA
READ
READ
t
CKLZ
(4)
(2)
(1)
t
SW
t
HW
WRITE
(5)
R/
W
ADDRESS
An
An +1
An + 2
t
SD
t
HD
An + 3
An + 4
An + 5
(4)
DATA
IN
Dn + 2
CE
0
CLK
3743 drw 13
Qn
DATA
OUT
CE
1
UB
,
LB
t
CD1
t
CH1
t
CL1
t
CD1
t
DC
Qn + 4
t
CD1
t
DC
t
SC
t
HC
t
SB
t
HB
t
SW
t
HW
t
SA
t
HA
READ
WRITE
READ
t
CKLZ
(2)
Dn + 3
t
OHZ
(1)
(1)
t
SW
t
HW
OE
t
OE
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