參數(shù)資料
型號: IDT70V9279S6PRF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
中文描述: 32K X 16 DUAL-PORT SRAM, 15 ns, PQFP128
封裝: 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128
文件頁數(shù): 10/19頁
文件大?。?/td> 337K
代理商: IDT70V9279S6PRF
6.42
IDT70V9279/69S/L
High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle for Flow-through Output
(
FT
/PIPE
"X"
= V
IL
)
(3,7)
10
Timing Waveform of Read Cycle for Pipelined Output
(
FT
/PIPE
"X"
= V
IH
)
(3,7)
t
CYC2
t
CH2
t
CL2
An
An + 1
An + 2
An + 3
t
CYC1
t
CH1
t
CL1
R/
W
ADDRESS
DATA
OUT
CE
0
CLK
OE
t
SC
t
HC
t
CD1
t
CKLZ
Qn
Qn + 1
Qn + 2
t
OHZ
t
OLZ
t
OE
t
CKHZ
3743 drw 06
(1)
(1)
(1)
(1)
(2)
CE
1
UB
,
LB
t
SB
t
HB
t
SW
t
HW
t
SA
t
HA
t
DC
t
DC
(5)
t
SC
t
HC
t
SB
t
HB
An
An + 1
An + 2
An + 3
R/
W
ADDRESS
CE
0
CLK
CE
1
UB
,
LB
(4)
DATA
OUT
OE
t
CD2
t
CKLZ
Qn
Qn + 1
Qn + 2
t
OHZ
t
OLZ
t
OE
3743 drw 07
(1)
(1)
(1)
(2)
t
SC
t
HC
t
SB
t
HB
t
SW
t
SA
t
HW
t
HA
t
DC
t
SC
t
HC
t
SB
t
HB
(5)
(1 Latency)
(6)
(6)
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2.
OE
is asynchronously controlled; all other inputs are synchronous to the rising clock edge.
3.
ADS
= V
IL
,
CNTEN
and
CNTRST
= V
IH
.
4. The output is disabled (High-Impedance state) by
CE
0
= V
IH
or CE
1
= V
IL
following the next rising edge of the clock. Refer to Truth Table 1.
5. Addresses do not have to be accessed sequentially since ADS = V
IL
constantly loads the address on the rising edge of the CLK; numbers
are for reference use only.
6. If
UB
or
LB
was HIGH, then the Upper Byte and/or Lower Byte of DATA
OUT
for Qn + 2 would be disabled (High-Impedance state).
7. "
X
" denotes Left or Right port. The diagram is with respect to that port.
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