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參數資料
| 型號： | IDT70V9279S9PRFI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM |
| 中文描述： | 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP128 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 |
| 文件頁數： | 17/19頁 |
| 文件大小： | 337K |
| 代理商： | IDT70V9279S9PRFI |
6.42
IDT70V9279/69S/L
High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Functional Description
The IDT70V9279/69 provides a true synchronous Dual-Port Static
RAM interface. Registered inputs provide minimal set-up and hold times
on address, data, and all critical control inputs. All internal registers are
clocked on the rising edge of the clock signal, however, the self-timed
internal write pulse s ndependent of the LOW to HIGH transition of the clock
signal.
An asynchronous output enable is provided to ease asynchronous
bus interfacing. Counter enable inputs are also provided to staff the
operation of the address counters for fast nterleaved memory applications.
A HIGH on
CE
0
or a LOW on CE
1
for one clock cycle will power down
the internal circuitry to reduce static power consumption. Multiple chip
enables allow easier banking of multiple IDT70V9279/69's for depth
expansion configurations. When the Pipelined output mode s enabled, two
cycles are required with
CE
0
LOW and CE
1
HIGH to re-activate the
outputs.
17
Depth and Width Expansion
The IDT70V9279/69 features dual chip enables (refer to Truth Table
I) in order to facilitate rapid and simple depth expansion with no require-
ments for external ogic. Figure 4 llustrates how to control the varioius chip
enables in order to expand two devices in depth.
The IDT70V9279/69 can also be used in applications requiring
expanded width, as indicated in Figure 4. Since the banks are allocated
at the discretion of the user, the external controller can be set up to drive
the input signals for the various devices as required to allow for 32-bit or
wider applications.
3743 drw 18
IDT70V9279/69
CE
0
CE
1
CE
1
CE
0
CE
0
CE
1
A
15
/A
14(1)
CE
1
CE
0
V
DD
V
DD
IDT70V9279/69
IDT70V9279/69
IDT70V9279/69
Control Inputs
Control Inputs
Control Inputs
Control Inputs
CNTRST
CLK
ADS
CNTEN
R/
W
LB
,
UB
OE
,
Figure 4. Depth and Width Expansion with IDT70V9279/69
NOTE:
1. A
15
is for IDT70V9279. A
14
is for IDT70V9269.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IDT70V9279S9PRFI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 512KBIT 9NS 128TQFP |
| IDT70V9289L12PRF | 功能描述:IC SRAM 1MBIT 12NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V9289L12PRF8 | 功能描述:IC SRAM 1MBIT 12NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V9289L6PRF | 功能描述:IC SRAM 1MBIT 6NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V9289L6PRF8 | 功能描述:IC SRAM 1MBIT 6NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
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