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參數(shù)資料
| 型號： | IDT71016S15YI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 |
| 中文描述： | 64K X 16 STANDARD SRAM, 15 ns, PDSO44 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, PLASTIC, SOJ-44 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 482K |
| 代理商： | IDT71016S15YI |
JANUARY 2004
DSC-3210/8
1
2004 Integrated Device Technology, Inc.
Features
◆
64K x 16 advanced high-speed CMOS Static RAM
◆
Equal access and cycle times
– Commercial and Industrial: 12/15/20ns
◆
One Chip Select plus one Output Enable pin
◆
Bidirectional data inputs and outputs directly TTL-
compatible
◆
Low power consumption via chip deselect
◆
Upper and Lower Byte Enable Pins
◆
Commercial and industrial product available in 44-pin
Plastic SOJ package and 44-pin TSOP package
Description
The IDT71016 is a 1,048,576-bit high-speed Static RAMorganized
as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability
CMOS technology. This state-of-the-art technology, combined with
innovative circuit design techniques, provides a cost-effective solution for
high-speed memory needs.
The IDT71016 has an output enable pin which operates as fast as 7ns,
with address access times as fast as 12ns. All bidirectional inputs and
outputs of the IDT71016 are TTL-compatible and operation is froma single
5V supply. Fully static asynchronous circuitry is used, requiring no clocks
or refresh for operation.
The IDT71016 is packaged in a JEDEC standard 44-pin Plastic SOJ
and 44-pin TSOP Type II.
Functional Block Diagram
Output
Enable
Buffer
Address
Buffers
Chip
Enable
Buffer
Write
Enable
Buffer
Byte
Enable
Buffers
OE
A0 - A15
Row / Column
Decoders
CS
WE
BHE
BLE
64K x 16
Memory
Array
Sense
Amps
and
Write
Drivers
16
Low
Byte
I/O
Buffer
8
8
8
8
I/O 8
I/O 15
I/O 7
I/O 0
3210 drw 01
High
Byte
I/O
Buffer
,
CMOS Static RAM
1 Meg (64K x 16-Bit)
IDT71016
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71016S-15YI | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT71016S15YI8 | 功能描述:IC SRAM 1MBIT 15NS 44SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71016S20PH | 功能描述:IC SRAM 1MBIT 20NS 44TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71016S20PH8 | 功能描述:IC SRAM 1MBIT 20NS 44TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71016S20PHG | 功能描述:IC SRAM 1MBIT 20NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x20） 包裝:托盤 |
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