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參數(shù)資料
| 型號： | IDT71256L55TD |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 |
| 中文描述： | 的CMOS靜態(tài)RAM 256K（32K的× 8位） |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 78K |
| 代理商： | IDT71256L55TD |
7.2
3
IDT71256S/L
CMOS STATIC RAM 256K (32K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(1, 2)
(V
CC
= 5.0V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
71256S/L20
71256S/L25
Com’l.
71256S/L30
Com’l.
71256S/L35
Com’l.
Symbol
Parameter
Power Com’l.
Mil.
Mil.
Mil.
Mil.
Unit
I
CC
Dynamic Operating Current
CS
≤
V
IL
, Outputs Open
V
CC
= Max., f = f
MAX(2)
S
—
—
—
150
—
145
—
140
mA
L
135
—
115
130
—
125
105
120
I
SB
Standby Power Supply
Current (TTL Level)
CS
≥
V
IH
, V
CC
= Max.,
Outputs Open, f = f
MAX(2)
S
—
—
—
20
—
20
—
20
mA
L
3
—
3
3
—
3
3
3
I
SB1
Full Standby Power Supply
Current (CMOS Level)
CS
≥
V
HC
, V
CC
= Max., f = 0
S
—
—
—
20
—
20
—
20
mA
L
0.4
—
0.4
1.5
—
1.5
0.4
1.5
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Temperature
GND
V
CC
Military
–55
°
C to +125
°
C
0
°
C to +70
°
C
0V
5.0V
±
10%
5.0V
±
10%
Commercial
0V
2946 tbl 05
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Supply Voltage
0
0
0
V
V
IH
Input High Voltage
2.2
—
6.0
V
V
IL
Input Low Voltage
–0.5
(1)
—
0.8
V
NOTE:
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
2946 tbl 06
NOTES:
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
, all address inputs cycling at f
MAX
; f = 0 means no address pins are cycling.
3. Also available: 120 and 150 ns military devices.
2946 tbl 07
71256S/L45
71256S/L55
71256S/L70
71256S/L85
(3)
71256S/L100
(3)
Symbol
Parameter
Power
Com’l. Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com'l.
Mil.
Unit
I
CC
Dynamic Operating Current
CS
≤
V
IL
, Outputs Open
V
CC
= Max., f = f
MAX(2)
S
—
135
—
135
—
135
—
135
—
135
mA
L
100
115
—
115
—
115
—
115
—
115
I
SB
Standby Power Supply
Current (TTL Level)
CS
≥
V
IH
, V
CC
= Max.,
Outputs Open, f = f
MAX(2)
S
—
20
—
20
—
20
—
20
—
20
mA
L
3
3
—
3
—
3
—
3
—
3
I
SB1
Full Standby Power Supply
Current (CMOS Level)
CS
≥
V
HC
, V
CC
= Max., f = 0
S
—
20
—
20
—
20
—
20
—
20
mA
L
0.4
1.5
—
1.5
—
1.5
—
1.5
—
1.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT71256L55Y | CMOS STATIC RAM 256K (32K x 8-BIT) |
| IDT71256L85D | Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 |
| IDT71256L85DB | CMOS STATIC RAM 256K (32K x 8-BIT) |
| IDT71256L85L | CMOS STATIC RAM 256K (32K x 8-BIT) |
| IDT71256L85LB | Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SOIC -20 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71256L55TDB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 55NS 28CDIP |
| IDT71256L70DB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 70NS 28CDIP |
| IDT71256L70TDB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 70NS 28CDIP |
| IDT71256L85DB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 85NS 28CDIP |
| IDT71256L85TDB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 85NS 28CDIP |
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