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參數(shù)資料
| 型號(hào)： | IDT71256S55YB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | CMOS STATIC RAM 256K (32K x 8-BIT) |
| 中文描述： | 的CMOS靜態(tài)RAM 256K（32K的× 8位） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 78K |
| 代理商： | IDT71256S55YB |
7.2
2
IDT71256 S/L
CMOS STATIC RAM 256K (32K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
TRUTH TABLE
(1)
WE
CS
OE
I/O
Function
X
H
X
High-Z
Standby (I
SB
)
X
V
HC
X
High-Z
Standby (
ISB1
)
H
L
H
High-Z
Output Disabled
H
L
L
D
OUT
Read Data
L
L
X
D
IN
Write Data
NOTE:
1. H = V
IH
, L = V
IL
, X = Don’t Care
2946 tbl 02
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Com’l.
Mil.
Unit
V
TERM
Terminal Voltage
with Respect
to GND
–0.5 to +7.0
–0.5 to +7.0
V
T
A
Operating
Temperature
0 to +70
–55 to +125
°
C
T
BIAS
Temperature
Under Bias
–55 to +125
–65 to +135
°
C
T
STG
Storage
Temperature
–55 to +125
–65 to +150
°
C
P
T
Power Dissipation
1.0
1.0
W
I
OUT
DC Output
Current
50
50
mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating con-
ditions for extended periods may affect reliability.
2946 tbl 03
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max. Unit
C
IN
Input Capacitance
V
IN
= 0V
11
pF
C
I/O
I/O Capacitance
V
OUT
= 0V
11
pF
NOTE:
1. This parameter is determined by device characterization, but is not
production tested.
2946 tbl 04
PIN DESCRIPTIONS
Name
Description
A
0
–A
14
Addresses
I/O
0
–
I/O
7
Data Input/Output
CS
Chip Select
WE
Write Enable
OE
Output Enable
GND
Ground
V
CC
Power
2946 tbl 01
2946 drw 02
5
6
7
8
9
10
11
12
13
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
24
23
22
21
20
19
18
17
16
15
D28-3
P28-1
P28-2
D28-1
SO28-5
28
27
26
25
V
CC
WE
A
13
A
8
A
9
A
11
OE
A
10
CS
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
14
32-Pin LCC
TOP VIEW
DIP/SOJ
TOP VIEW
5
6
7
8
9
10
11
12
13
L32-1
29
28
27
26
25
24
23
22
21
15 16 17 18 19
3
2
1
32 31
INDEX
A
3
A
2
A
1
A
0
NC
V
C
A
7
G
W
OE
A
10
CS
I/O
7
I/O
6
NC
A
8
A
9
A
11
A
6
A
5
A
4
A
2946 drw 03
I/O
0
4
30
20
14
N
N
2
I
3
I
4
I
5
I
A
1
A
1
I
1
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| IDT71256SA12PZ | 功能描述:IC SRAM 256KBIT 12NS 28TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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