參數(shù)資料
型號： IDT71256S70D
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： CMOS STATIC RAM 256K (32K x 8-BIT)
中文描述： 32K X 8 STANDARD SRAM, 70 ns, CDIP28
封裝： 0.600 INCH, CERDIP-28
文件頁數(shù)： 3/9頁
文件大?。?/td> 78K
代理商： IDT71256S70D
7.2
3
IDT71256S/L
CMOS STATIC RAM 256K (32K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(1, 2)
(V
CC
= 5.0V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
71256S/L20
71256S/L25
Com’l.
71256S/L30
Com’l.
71256S/L35
Com’l.
Symbol
Parameter
Power Com’l.
Mil.
Mil.
Mil.
Mil.
Unit
I
CC
Dynamic Operating Current
CS
≤
V
IL
, Outputs Open
V
CC
= Max., f = f
MAX(2)
S
—
—
—
150
—
145
—
140
mA
L
135
—
115
130
—
125
105
120
I
SB
Standby Power Supply
Current (TTL Level)
CS
≥
V
IH
, V
CC
= Max.,
Outputs Open, f = f
MAX(2)
S
—
—
—
20
—
20
—
20
mA
L
3
—
3
3
—
3
3
3
I
SB1
Full Standby Power Supply
Current (CMOS Level)
CS
≥
V
HC
, V
CC
= Max., f = 0
S
—
—
—
20
—
20
—
20
mA
L
0.4
—
0.4
1.5
—
1.5
0.4
1.5
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Temperature
GND
V
CC
Military
–55
°
C to +125
°
C
0
°
C to +70
°
C
0V
5.0V
±
10%
5.0V
±
10%
Commercial
0V
2946 tbl 05
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Supply Voltage
0
0
0
V
V
IH
Input High Voltage
2.2
—
6.0
V
V
IL
Input Low Voltage
–0.5
(1)
—
0.8
V
NOTE:
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
2946 tbl 06
NOTES:
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
, all address inputs cycling at f
MAX
; f = 0 means no address pins are cycling.
3. Also available: 120 and 150 ns military devices.
2946 tbl 07
71256S/L45
71256S/L55
71256S/L70
71256S/L85
(3)
71256S/L100
(3)
Symbol
Parameter
Power
Com’l. Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com'l.
Mil.
Unit
I
CC
Dynamic Operating Current
CS
≤
V
IL
, Outputs Open
V
CC
= Max., f = f
MAX(2)
S
—
135
—
135
—
135
—
135
—
135
mA
L
100
115
—
115
—
115
—
115
—
115
I
SB
Standby Power Supply
Current (TTL Level)
CS
≥
V
IH
, V
CC
= Max.,
Outputs Open, f = f
MAX(2)
S
—
20
—
20
—
20
—
20
—
20
mA
L
3
3
—
3
—
3
—
3
—
3
I
SB1
Full Standby Power Supply
Current (CMOS Level)
CS
≥
V
HC
, V
CC
= Max., f = 0
S
—
20
—
20
—
20
—
20
—
20
mA
L
0.4
1.5
—
1.5
—
1.5
—
1.5
—
1.5
相關PDF資料
PDF描述
IDT71256S70DB CMOS STATIC RAM 256K (32K x 8-BIT)
IDT71256S55D CMOS STATIC RAM 256K (32K x 8-BIT)
IDT71256S55DB CMOS STATIC RAM 256K (32K x 8-BIT)
IDT71256S85PB CMOS STATIC RAM 256K (32K x 8-BIT)
IDT7130SA25TFB HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
IDT71256S70DB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 70NS 28CDIP
IDT71256S70TDB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 70NS 28CDIP
IDT71256S85DB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 85NS 28CDIP
IDT71256S85TDB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 85NS 28CDIP
IDT71256SA12PZ 功能描述:IC SRAM 256KBIT 12NS 28TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*