參數(shù)資料
型號(hào)： IDT7130SA100CB
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
中文描述： 1K X 8 DUAL-PORT SRAM, 100 ns, CDIP48
封裝： SIDE BRAZED, DIP-48
文件頁數(shù)： 4/14頁
文件大?。?/td> 218K
代理商： IDT7130SA100CB
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.01
4
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1,6)
(V
CC
= 5.0V
±
10%)
7130X20
(2)
7130X25
(3)
7130X35
7140X35
7130X55
7140X55
7130X100
7140X100
7140X25
(3)
Symbol
Parameter
Test Conditions
Version
Typ. Max. Typ. Max. Typ. Max. Typ.Max. Typ. Max.
Unit
I
CC
Dynamic Operating
Current (Both Ports
Active)
CE
L
and
CE
R
= V
IL
, MIL.
Outputs open,
f = f
MAX
(4)
SA
LA
—
—
110
110
—
—
250
200
110
110
110
110
280
220
220
170
110
110
110
110
230
170
165
120
110 190
110 140
110 155
110 110
110 190
110 140
110 155
110 110
mA
COM'L. SA
LA
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE
L
and
CE
R
= V
IH
, MIL.
f = f
MAX
(4)
SA
LA
—
—
30
30
—
—
65
45
30
30
30
30
80
60
65
45
25
25
25
25
80
60
65
45
20
20
20
20
65
45
65
35
20
20
20
20
65
45
55
35
mA
COM'L. SA
LA
I
SB2
Standby Current
CE
"
A
"
=
V
IL
and
(One Port - TTL
Level Inputs)
MIL.
SA
LA
—
—
65
65
—
—
165
125
65
65
65
65
160
125
150
115
50
50
50
50
150
115
125
90
40
40
40
40
125
90
110
75
40
40
40
40
125
90
110
75
mA
CE
"
B
"
=
V
IH
(7)
Active Port Outputs COM'L. SA
Open, f = f
MAX
(4)
LA
I
SB3
Full Standby Current
(Both Ports - All
CMOS Level Inputs
CE
L
and
CE
R
> V
CC
-0.2V,
V
IN
> V
CC
-0.2V or
V
IN
< 0.2V,f = 0
(5)
MIL.
SA
LA
—
—
1.0
0.2
—
—
15
5
1.0
0.2
1.0
0.2
30
10
15
5
1.0
0.2
1.0
0.2
30
10
15
4
1.0
0.2
1.0
0.2
30
10
15
4
1.0
0.2
1.0
0.2
30
10
15
4
mA
COM'L. SA
LA
I
SB4
Full Standby Current
(One Port - All
CMOS Level Inputs)
CE
"
A
"
<
0.2V and
CE
"
B
"
> V
CC
-0.2V
(7)
V
IN
> V
CC
-0.2V or
V
IN
< 0.2V,
Active Port Outputs
Open, f = f
MAX
(4)
MIL.
SA
LA
—
—
60
60
—
—
155
115
60
60
60
60
155
115
145
105
45
45
45
45
145
105
110
85
40
40
40
40
110
85
100
70
40
40
40
40
110
80
95
70
mA
COM'L. SA
LA
NOTES:
1. 'X' in part numbers indicates power rating (SA or LA).
2. Com'l Only, 0
°
C to +70
°
C temperature range. PLCC and TQFP packages.
3. Not available in DIP packages.
4. At f = f
Max
, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t
RC
, and using “AC TEST CONDITIONS”
of input levels of GND to 3V.
5. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
6. Vcc = 5V, T
A
=+25
°
C for Typ and is not production tested. Vcc
DC
= 100 mA (Typ.)
7. Port "A" may be either left or right port. Port "B" is opposite from port "A".
2689 tbl 06
Symbol
V
DR
I
CCDR
Parameter
V
CC
for Data Retention
Data Retention Current
Min.
2.0
—
—
0
Typ.
(1)
—
100
100
—
Max.
—
4000
1500
—
Unit
V
μ
A
μ
A
ns
t
CDR
Chip Deselect to Data
Retention Time
Operation Recovery
Time
t
R
t
RC
—
—
ns
DATA RETENTION CHARACTERISTICS
(LA Version Only)
lDT7130LA/IDT7140LA
Mil.
Com’l.
V
CC
= 2.0V,
CE
> V
CC
-0.2V
V
IN
> V
CC
-0.2V or V
IN
< 0.2V
(3)
(3)
Test Conditions
2689 tbl 07
(2)
NOTES:
1. V
CC
= 2V, T
A
= +25
°
C, and is not production tested.
2. t
RC
= Read Cycle Time
3. This parameter is guaranteed but not production tested.
相關(guān)PDF資料
PDF描述
IDT7130SA100F HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
IDT7130SA100FB HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
IDT7130SA100J HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
IDT7130SA100JB HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
IDT7130SA100L48 HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
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