- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377302 > IDT7130SA25CG (INTEGRATED DEVICE TECHNOLOGY INC) Replacement for Intersil part number 5962-8964301XC. Buy from authorized manufacturer Rochester Electronics. PDF資料下載
參數(shù)資料
| 型號(hào)： | IDT7130SA25CG |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Replacement for Intersil part number 5962-8964301XC. Buy from authorized manufacturer Rochester Electronics. |
| 中文描述： | 1K X 8 DUAL-PORT SRAM, 25 ns, CDIP48 |
| 封裝： | 0.620 X 2.430 INCH, 0.150 INCH HEIGHT, GREEN, SIDE BRAZED, DIP-48 |
| 文件頁數(shù)： | 10/19頁 |
| 文件大小： | 167K |
| 代理商： | IDT7130SA25CG |
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM Military, Industrial and Commercial Temperature Ranges
10
AC Elec tric al Charac teristic s Over the
Operating Temperature Supply Voltage Range
(5)
NOTES:
1. Transition is measured 0mV fromLow or High-impedance voltage with Output Test Load (Figure 2). This parameter is guaranteed by device characterization but
is not production tested.
2. PLCC, TQFP and STQFP packages only.
3. For MASTER/SLAVE combination, t
WC
= t
BAA
+ t
WP
, since R/
W
= V
IL
must occur after t
BAA.
4. If
OE
is LOW during a R/
W
controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn off data
to be placed on the bus for the required t
DW
. If
OE
is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse
can be as short as the specified t
WP
.
5. 'X' in part numbers indicates power rating (SA or LA).
Symbol
Parameter
7130X20
(2)
7140X20
(2)
Com'l Only
7130X25
7140X25
Com'l, Ind
& Military
7130X35
7140X35
Com'l
& Military
Unit
Min.
Max.
Mn.
Max.
Mn.
Max.
WRITE CYCLE
t
WC
Write Cycle Time
(3)
20
____
25
____
35
____
ns
t
EW
Chip Enable to End-of-Write
15
____
20
____
30
____
ns
t
AW
Address Valid to End-of-Write
15
____
20
____
30
____
ns
t
AS
Address Set-up Time
0
____
0
____
0
____
ns
t
WP
Write Pulse Width
(4)
15
____
15
____
25
____
ns
t
WR
Write Recovery Time
0
____
0
____
0
____
ns
t
DW
Data Valid to End-of-Write
10
____
12
____
15
____
ns
t
HZ
Output High-Z Time
(1)
____
10
____
10
____
15
ns
t
DH
Data Hold Time
0
____
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1)
____
10
____
10
____
15
ns
t
OW
Output Active fromEnd-of-Write
(1)
0
____
0
____
0
____
ns
2689 tbl 10a
Symbol
Parameter
7130X55
7140X55
Com'l, Ind
& Military
7130X100
7140X100
Com'l, Ind
& Military
Unit
Mn.
Max.
Mn.
Max.
WRITE CYCLE
t
WC
Write Cycle Time
(3)
55
____
100
____
ns
t
EW
Chip Enable to End-of-Write
40
____
90
____
ns
t
AW
Address Valid to End-of-Write
40
____
90
____
ns
t
AS
Address Set-up Time
0
____
0
____
ns
t
WP
Write Pulse Width
(4)
30
____
55
____
ns
t
WR
Write Recovery Time
0
____
0
____
ns
t
DW
Data Valid to End-of-Write
20
____
40
____
ns
t
HZ
Output High-Z Time
(1)
____
25
____
40
ns
t
DH
Data Hold Time
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1)
____
25
____
40
ns
t
OW
Output Active fromEnd-of-Write
(1)
0
____
0
____
ns
2689 tbl 10b
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7130SA25CGB | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| IDT7130SA25CGI | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| IDT7130SA25FG | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| IDT7130SA25FGB | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| IDT7130SA25FGI | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7130SA25J | 功能描述:IC SRAM 8KBIT 25NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7130SA25J8 | 功能描述:IC SRAM 8KBIT 25NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7130SA25L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 8KBIT 25NS 48LCC |
| IDT7130SA25PF | 功能描述:IC SRAM 8KBIT 25NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7130SA25PF8 | 功能描述:IC SRAM 8KBIT 25NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。