參數資料
型號: IDT7130SA55L48
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
中文描述: 1K X 8 DUAL-PORT SRAM, 55 ns, CQCC48
封裝: LCC-48
文件頁數: 11/14頁
文件大?。?/td> 218K
代理商: IDT7130SA55L48
6.01
11
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(2)
8M824S25
7130X55
7140X55
Min.
8M824S308M824S35
7130X100
7140X100
Min.
Max.
7130X20
(1)
7130X25
(3)
7140X25
(3)
Min.
7130X35
7140X35
Min. Max.
Symbol
Interrupt Timing
t
AS
t
WR
t
INS
t
INR
Parameter
Min.
Max.
Max.
Max.
Unit
Address Set-up Time
Write Recovery Time
Interrupt Set Time
Interrupt Reset Time
0
0
20
20
0
0
25
25
0
0
25
25
0
0
45
45
0
0
60
60
ns
ns
ns
ns
2689 tbl 12
NOTES:
1.
2.
3.
0
°
C to +70
°
C temperature range only, PLCC and TQFP packages.
“X” in part numbers indicates power rating (SA or LA).
Not available in DIP packages .
INT
SET:
TIMING WAVEFORM OF INTERRUPT MODE
INT
CLEAR:
NOTES:
.
1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
2. See Interrupt Truth Table.
3. Timing depends on which enable signal (
CE
or R/
W
) is asserted last.
4. Timing depends on which enable signal (
CE
or R/
W
) is de-asserted first.
t
INS
ADDR
'A'
INT
'B'
INTERRUPT ADDRESS
t
WC
t
AS
R/
W
'A'
t
WR
2689 drw 16
(3)
(3)
(2)
(4)
t
RC
INTERRUPT CLEAR ADDRESS
ADDR
'B'
OE
'B'
t
INR
INT
'B'
2689 drw 17
t
AS
(3)
(3)
相關PDF資料
PDF描述
IDT7130SA55L48B HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
IDT7130SA55P HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
IDT7130SA55PB HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
IDT7130SA55PF HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
IDT7130SA55PFB 30V PowerTrench MOSFET; Package: Power 56; No of Pins: 8; Container: Tape & Reel
相關代理商/技術參數
參數描述
IDT7130SA55L48B 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 8KBIT 55NS 48LCC
IDT7130SA55P 功能描述:IC SRAM 8KBIT 55NS 48DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
IDT7130SA55PF 功能描述:IC SRAM 8KBIT 55NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
IDT7130SA55PF8 功能描述:IC SRAM 8KBIT 55NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M(256K x 18) 速度:133MHz 接口:并聯 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP(14x20) 包裝:托盤
IDT7130SA55TF 功能描述:IC SRAM 8KBIT 55NS 64STQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)