- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377304 > IDT7130SA55TFGB (INTEGRATED DEVICE TECHNOLOGY INC) HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM PDF資料下載
參數(shù)資料
| 型號： | IDT7130SA55TFGB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| 中文描述： | 1K X 8 DUAL-PORT SRAM, 55 ns, PQFP64 |
| 封裝： | 10 X 10 MM, 1.40 MM HEIGHT, GREEN, STQFP-64 |
| 文件頁數(shù)： | 17/19頁 |
| 文件大?。?/td> | 167K |
| 代理商： | IDT7130SA55TFGB |
17
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM Military, Industrial and Commercial Temperature Ranges
Func tional Desc ription
The IDT7130/IDT7140 provides two ports with separate control,
address and I/O pins that permt independent access for reads or
writes to any location in memory. The IDT7130/IDT7140 has an
automatic power down feature controlled by
CE
. The
CE
controls on-
chip power down circuitry that permts the respective port to go into a
standby mode when not selected (
CE
= V
IH
). When a port is enabled,
access to the entire memory array is permtted.
Interrupts
If the user chooses the interrupt function, a memory location (mail
box or message center) is assigned to each port. The left port interrupt
flag (
INT
L
) is asserted when the right port writes to memory location
3FE (HEX), where a write is defined as the
CE
R
= R/
W
R
= V
IL
per Truth
Table II. The left port clears the interrupt by access address location
3FE access when
CE
L
=
OE
L =
V
IL,
R/W
is a "don't care". Likewise, the
right port interrupt flag (
INT
R
) is asserted when the left port writes to
memory location 3FF (HEX) and to clear the interrupt flag (
INT
R
), the
right port must access the memory location 3FF. The message (8 bits)
at 3FE or 3FF is user-defined, since it is an addressable SRAM
location. If the interrupt function is not used, address locations 3FE and
3FF are not used as mail boxes, but as part of the randomaccess
memory. Refer to Truth Table II for the interrupt operation.
Busy Logic
Busy Logic provides a hardware indication that both ports of the
RAMhave accessed the same location at the same time. It also allows
one of the two accesses to proceed and signals the other side that the
RAMis “Busy”. The
BUSY
pin can then be used to stall the access until
the operation on the other side is completed. If a write operation has
been attempted fromthe side that receives a
BUSY
indication, the
write signal is gated internally to prevent the write fromproceeding.
The use of
BUSY
logic is not required or desirable for all applica-
tions. In some cases it may be useful to logically OR the
BUSY
outputs
together and use any
BUSY
indication as an interrupt source to flag the
event of an illegal or illogical operation. In slave mode the
BUSY
pin
operates solely as a write inhibit input pin. Normal operation can be
programmed by tying the
BUSY
pins HIGH. If desired, unintended
write operations can be prevented to a port by tying the
BUSY
pin for
that port LOW.
The
BUSY
outputs on the IDT7130 RAM(Master) are open drain
type outputs and require open drain resistors to operate. If these
RAMs are being expanded in depth, then the
BUSY
indication for the
resulting array does not require the use of an external AND gate.
Width Expansion with Busy Logic
Master/Slave Arrays
When expanding an RAMarray in width while using busy logic, one
master part is used to decide which side of the RAMarray will receive
a busy indication, and to output that indication. Any number of slaves
to be addressed in the same address range as the master, use the
busy signal as a write inhibit signal. Thus on the IDT7130/IDT7140
RAMs the
BUSY
pin is an output if the part is Master (IDT7130), and
the
BUSY
pin is an input if the part is a Slave (IDT7140) as shown in
Figure 3.
If two or more master parts were used when expanding in width,
a split decision could result with one master indicating busy on one side
of the array and another master indicating busy on one other side of
the array. This would inhibit the write operations fromone port for part
of a word and inhibit the write operations fromthe other port for the
other part of the word.
The
BUSY
arbitration, on a Master, is based on the chip enable and
address signals only. It ignores whether an access is a read or write.
In a master/slave array, both address and chip enable must be valid
long enough for a
BUSY
flag to be output fromthe master before the
actual write pulse can be initiated with either the R/
W
signal or the byte
enables. Failure to observe this timng can result in a glitched internal
write inhibit signal and corrupted data in the slave.
Figure 3. Busy and chip enable routing for both width and depth
expansion with IDT7130 (Master) and IDT7140 (Slave)RAMs.
2689 drw 18
MASTER
Dual Port
RAM
BUSY
L
BUSY
R
CE
MASTER
Dual Port
RAM
BUSY
L
BUSY
R
CE
SLAVE
Dual Port
RAM
BUSY
L
BUSY
R
CE
SLAVE
Dual Port
RAM
BUSY
L
BUSY
R
CE
BUSY
L
BUSY
R
D
5V
5V
270
270
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7130SA55TFGI | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| IDT7132SA25L48 | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
| IDT7142SA25L48 | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
| IDT7132LA25L48 | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
| IDT7142LA25L48 | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71321LA20J | 功能描述:IC SRAM 16KBIT 20NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT71321LA20J8 | 功能描述:IC SRAM 16KBIT 20NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT71321LA20JG | 功能描述:IC SRAM 16KBIT 20NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT71321LA20JG8 | 功能描述:IC SRAM 16KBIT 20NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT71321LA20PF | 功能描述:IC SRAM 16KBIT 20NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。