參數(shù)資料
型號(hào): IDT71321LA35PFI
廠商: Integrated Device Technology, Inc.
英文描述: HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
中文描述: 高速2K × 8雙端口靜態(tài)RAM的中斷
文件頁數(shù): 11/16頁
文件大?。?/td> 255K
代理商: IDT71321LA35PFI
6.42
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
(7,8)
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
PLCC package only.
Port-to-port delay through RAM cells from the writing port to the reading port, refer to “Timing Waveform of Write with Port -to-Port Read and BUSY.”
To ensure that the earlier of the two ports wins.
t
BDD
is a calculated parameter and is the greater of 0, t
WDD
– t
WP
(actual) or t
DDD
– t
DW
(actual).
To ensure that a write cycle is inhibited on port "B" during contention on port "A".
To ensure that a write cycle is completed on port "B" after contention on port "A".
'X' in part numbers indicates power rating (SA or LA).
Industrial temperature: for specific speeds, packages and powers contact your sales office.
7132X20
(1)
7142X20
(1)
Com'l Only
7132X25
(2)
7142X25
(2)
Com'l, Ind
& Military
7132X35
7142X35
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY
Timing (For Master IDT7132 Only)
t
BAA
BUSY
Access Time from Address
____
20
____
20
____
20
ns
t
BDA
BUSY
Disable Time from Address
____
20
____
20
____
20
ns
t
BAC
BUSY
Access Time from Chip Enable
____
20
____
20
____
20
ns
t
BDC
BUSY
Disable Time from Chip Enable
____
20
____
20
____
20
ns
t
WDD
Write Pulse to Data Delay
(2)
____
50
____
50
____
60
ns
t
WH
Write Hold After
BUSY
(6)
12
____
15
____
20
____
ns
t
DDD
Write Data Valid to Read Data Delay
(2)
____
35
____
35
____
35
ns
t
APS
Arbitration Priority Set-up Time
(3)
5
____
5
____
5
____
ns
t
BDD
BUSY
Disable to Valid Data
(4)
____
25
____
35
____
35
ns
BUSY
Timing (For Slave IDT7142 Only)
t
WB
Write to
BUSY
Input
(5)
0
____
0
____
0
____
ns
t
WH
Write Hold After
BUSY
(6)
12
____
15
____
20
____
ns
t
WDD
Write Pulse to Data Delay
(2)
____
40
____
50
____
60
ns
t
DDD
Write Data Valid to Read Data Delay
(2)
____
30
____
35
____
35
ns
2692 tbl 11a
7132X55
7142X55
Com'l &
Military
7132X100
7142X100
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
BUSY
Timing (For Master IDT7132 Only)
t
BAA
BUSY
Access Time from Address
____
30
____
50
ns
t
BDA
BUSY
Disable Time from Address
____
30
____
50
ns
t
BAC
BUSY
Access Time from Chip Enable
____
30
____
50
ns
t
BDC
BUSY
Disable Time from Chip Enable
____
30
____
50
ns
t
WDD
Write Pulse to Data Delay
(2)
____
80
____
120
ns
t
WH
Write Hold After
BUSY
(6)
20
____
20
____
ns
t
DDD
Write Data Valid to Read Data Delay
(2)
____
55
____
100
ns
t
APS
Arbitration Priority Set-up Time
(3)
5
____
5
____
ns
t
BDD
BUSY
Disable to Valid Data
(4)
____
50
____
65
ns
BUSY
Timing (For Slave IDT7142 Only)
t
WB
Write to
BUSY
Input
(5)
0
____
0
____
ns
t
WH
Write Hold After
BUSY
(6)
20
____
20
____
ns
t
WDD
Write Pulse to Data Delay
(2)
____
80
____
120
ns
t
DDD
Write Data Valid to Read Data Delay
(2)
____
55
____
100
ns
2692 tbl 11b
相關(guān)PDF資料
PDF描述
IDT71321LA35TF HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
IDT71321LA35TFI HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
IDT71321LA45J HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
IDT71321LA55J HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
IDT71321LA55JI HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT71321LA35TF 功能描述:IC SRAM 16KBIT 35NS 64STQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT71321LA35TF8 功能描述:IC SRAM 16KBIT 35NS 64STQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT71321LA45J 功能描述:IC SRAM 16KBIT 45NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
IDT71321LA45J8 功能描述:IC SRAM 16KBIT 45NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
IDT71321LA55J 功能描述:IC SRAM 16KBIT 55NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
<td id="g12w6"><em id="g12w6"><abbr id="g12w6"></abbr></em></td>
  • <var id="g12w6"><tbody id="g12w6"></tbody></var>