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參數(shù)資料
| 型號(hào)： | IDT71321SA35TF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| 中文描述： | 2K X 8 DUAL-PORT SRAM, 35 ns, PQFP64 |
| 封裝： | 10 X 10 MM, 1.40 MM HEIGHT, STQFP-64 |
| 文件頁(yè)數(shù)： | 10/16頁(yè) |
| 文件大小： | 255K |
| 代理商： | IDT71321SA35TF |
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10
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1, (R/
W
Controlled Timing)
(1,5,8)
t
WC
ADDRESS
CE
R/
W
DATA
IN
t
AS
(6)
t
EW
(2)
t
WR
(3)
t
DW
t
DH
t
AW
2692 drw 10
Timing Waveform of Write Cycle No. 2, (
CE
Controlled Timing)
(1,5)
NOTES:
1. R/
W
or
CE
must be HIGH during all address transitions.
2. A write occurs during the overlap (t
EW
or t
WP
) of
CE
= V
IL
and R/
W
= V
IL
.
3. t
WR
is measured from the earlier of
CE
or R/
W
going HIGH to the end of the write cycle.
4. During this period, the l/O pins are in the output state and input signals must not be applied.
5. If the
CE
LOW transition occurs simultaneously with or after the R/
W
LOW transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal (CE or R/W) is asserted last.
7. This parameter is determined be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
(Figure 2).
8. If
OE
is LOW during a R/
W
controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn off data to be placed on the
bus for the required t
DW
. If
OE
is HIGH during a R/
W
controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified t
WP
.
t
WC
ADDRESS
OE
CE
R/
W
DATA
OUT
DATA
IN
t
AS
(6)
t
OW
t
DW
t
DH
t
AW
t
WP
(2)
t
HZ
(7)
(4)
(4)
t
WZ
(7)
t
HZ
(7)
2692 drw 09
t
WR
(3)
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相關(guān)代理商/技術(shù)參數(shù) |
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| IDT71321SA35TF8 | 功能描述:IC SRAM 16KBIT 35NS 64STQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71321SA35TFG | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 35NS 64TQFP |
| IDT71321SA35TFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 35NS 64TQFP |
| IDT71321SA45J | 功能描述:IC SRAM 16KBIT 45NS 52PLCC RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71321SA45J8 | 功能描述:IC SRAM 16KBIT 45NS 52PLCC RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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