參數(shù)資料
型號: IDT7132LA100F
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
中文描述: 2K X 8 DUAL-PORT SRAM, 100 ns, CQFP48
封裝: 0.750 X 0.750 INCH, 0.110 INCH HEIGHT, CERAMIC, FP-48
文件頁數(shù): 11/16頁
文件大小: 255K
代理商: IDT7132LA100F
6.42
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
(7,8)
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
PLCC package only.
Port-to-port delay through RAM cells from the writing port to the reading port, refer to “Timing Waveform of Write with Port -to-Port Read and BUSY.”
To ensure that the earlier of the two ports wins.
t
BDD
is a calculated parameter and is the greater of 0, t
WDD
– t
WP
(actual) or t
DDD
– t
DW
(actual).
To ensure that a write cycle is inhibited on port "B" during contention on port "A".
To ensure that a write cycle is completed on port "B" after contention on port "A".
'X' in part numbers indicates power rating (SA or LA).
Industrial temperature: for specific speeds, packages and powers contact your sales office.
7132X20
(1)
7142X20
(1)
Com'l Only
7132X25
(2)
7142X25
(2)
Com'l, Ind
& Military
7132X35
7142X35
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY
Timing (For Master IDT7132 Only)
t
BAA
BUSY
Access Time from Address
____
20
____
20
____
20
ns
t
BDA
BUSY
Disable Time from Address
____
20
____
20
____
20
ns
t
BAC
BUSY
Access Time from Chip Enable
____
20
____
20
____
20
ns
t
BDC
BUSY
Disable Time from Chip Enable
____
20
____
20
____
20
ns
t
WDD
Write Pulse to Data Delay
(2)
____
50
____
50
____
60
ns
t
WH
Write Hold After
BUSY
(6)
12
____
15
____
20
____
ns
t
DDD
Write Data Valid to Read Data Delay
(2)
____
35
____
35
____
35
ns
t
APS
Arbitration Priority Set-up Time
(3)
5
____
5
____
5
____
ns
t
BDD
BUSY
Disable to Valid Data
(4)
____
25
____
35
____
35
ns
BUSY
Timing (For Slave IDT7142 Only)
t
WB
Write to
BUSY
Input
(5)
0
____
0
____
0
____
ns
t
WH
Write Hold After
BUSY
(6)
12
____
15
____
20
____
ns
t
WDD
Write Pulse to Data Delay
(2)
____
40
____
50
____
60
ns
t
DDD
Write Data Valid to Read Data Delay
(2)
____
30
____
35
____
35
ns
2692 tbl 11a
7132X55
7142X55
Com'l &
Military
7132X100
7142X100
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
BUSY
Timing (For Master IDT7132 Only)
t
BAA
BUSY
Access Time from Address
____
30
____
50
ns
t
BDA
BUSY
Disable Time from Address
____
30
____
50
ns
t
BAC
BUSY
Access Time from Chip Enable
____
30
____
50
ns
t
BDC
BUSY
Disable Time from Chip Enable
____
30
____
50
ns
t
WDD
Write Pulse to Data Delay
(2)
____
80
____
120
ns
t
WH
Write Hold After
BUSY
(6)
20
____
20
____
ns
t
DDD
Write Data Valid to Read Data Delay
(2)
____
55
____
100
ns
t
APS
Arbitration Priority Set-up Time
(3)
5
____
5
____
ns
t
BDD
BUSY
Disable to Valid Data
(4)
____
50
____
65
ns
BUSY
Timing (For Slave IDT7142 Only)
t
WB
Write to
BUSY
Input
(5)
0
____
0
____
ns
t
WH
Write Hold After
BUSY
(6)
20
____
20
____
ns
t
WDD
Write Pulse to Data Delay
(2)
____
80
____
120
ns
t
DDD
Write Data Valid to Read Data Delay
(2)
____
55
____
100
ns
2692 tbl 11b
相關(guān)PDF資料
PDF描述
IDT7142LA100F HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
IDT7132LA100FB HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
IDT7142LA100FB HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
IDT7132LA100FI HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
IDT7142LA100FI HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
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