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參數(shù)資料
| 型號(hào)： | IDT7132LA100FI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| 中文描述： | 高速2K × 8雙端口靜態(tài)RAM的中斷 |
| 文件頁(yè)數(shù)： | 2/16頁(yè) |
| 文件大?。?/td> | 255K |
| 代理商： | IDT7132LA100FI |
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IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges
Description
The IDT7132/IDT7142 are high-speed 2K x 8 Dual-Port Static RAMs.
The IDT7132 s designed to be used as a stand-alone 8-bit Dual-Port RAM
or as a “MASTER” Dual-Port RAM together with the IDT7142 “SLAVE”
Dual-Port n 16-bit-or-more word width systems. Using the IDT MASTER/
SLAVE Dual-Port RAM approach in 16-or-more-bit memory system
applications results n full-speed, error-free operation without the need for
additional discrete logic.
Both devices provide two independent ports with separate control,
address, and l/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature, controlled by
CE
permits the on-chip circuitry of each port to enter
Pin Configurations
(1,2,3)
NOTES:
1. All V
CC
pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. P48-1 package body is approximately .55 in x 2.43 in x .18 in.
C48-2 package body is approximately .62 in x 2.43 in x .15 in.
L48-1 package body is approximately .57 in x .57 in x .68 in.
F48-1 package body is approximately .75 in x .75 in x .11 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 325mW of power. Low-power (LA)
versions offer battery backup data retention capability, with each Dual-
Port typically consuming 200μW from a 2V battery.
The IDT7132/7142 devices are packaged in a 48-pin sidebraze or
plastic DIPs, 48-pin LCCs, 52-pin PLCCs, and 48-lead flatpacks.
Military grade product is manufactured in compliance with the latest
revision of MIL-PRF-38535 QML, making it ideally suited to military
temperature applications demanding the highest level of performance
and reliability.
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
IDT7132/
7142
P or C
P48-1
(4)
&
C48-2
(4)
48-Pin
DIP
Top
View
(5)
2692 drw 02
GND
I/O
6R
I/O
5R
I/O
4R
I/O
3R
I/O
2R
I/O
1R
I/O
0R
I/O
7L
I/O
6L
I/O
5L
I/O
4L
CE
R
R/
W
R
BUSY
R
A
10R
CE
L
R/
W
L
OE
L
A
0L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
BUSY
L
A
10L
V
CC
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
I/O
7R
I/O
3L
,
IDT7132/42L48 or F
L48-1
(4)
&
F48-1
(4)
48-Pin LCC/ Flatpack
Top View
(5)
INDEX
6 5
4 3
2
1
48 47 46 45 44 43
19 20 21 22 23
25 26 27 28 29 30
24
42
41
40
39
38
37
36
35
34
33
32
31
7
8
9
10
11
12
13
14
15
16
17
18
2692 drw 03
G
C
R
C
L
O
L
A
0
O
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
I/O
7R
I/O
6R
I
3
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
B
L
R
W
L
R
W
R
B
R
V
C
I
5
I
4
I
3
I
2
I
1
I
0
I
7
I
6
I
5
I
4
A
1
A
1
,
Capacitance
(1)
(T
A
= +25°C,f = 1.0MHz)
Symbol
Parameter
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 3V to 0V.
Conditions
(2)
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
11
pF
C
OUT
Output Capacitance
V
OUT
= 3dV
11
pF
2692 tbl 00
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| IDT7132LA100J | 功能描述:IC SRAM 16KBIT 100NS 52PLCC RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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| IDT7132LA100L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 100NS 48LCC |
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