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參數資料
| 型號： | IDT7132LA35FB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 2K X 8 DUAL-PORT SRAM, 35 ns, CQFP48 |
| 封裝： | 0.750 X 0.750 INCH, 0.110 INCH HEIGHT, CERAMIC, FP-48 |
| 文件頁數： | 3/11頁 |
| 文件大?。?/td> | 175K |
| 代理商： | IDT7132LA35FB |
6.02
3
IDT7132SA/LA AND IDT7142SA/LA
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
7132SA
7142SA
Min.
—
7132LA
7142LA
Symbol
|l
Ll
|
Parameter
Input Leakage
Current
(1)
Output Leakage
Current
(1)
Output Low Voltage
(l/O0-l/O
7
)
Open Drain Output
Low Voltage (
BUSY
,
INT
)
Output High Voltage
Supply Current
Test Conditions
V
CC
= 5.5V,
V
IN
= 0V to V
CC
IN
= GND to V
CC
V
CC
= 5.5V,
CE
= V
IH
, V
OUT
= 0V to V
CC
C
l
OL
= 4mA
l
OL
= 16mA
l
OL
= 16mA
Max.
10
Max.
—
Max.
5
Unit
μ
A
|l
LO
|
—
10
—
5
μ
A
V
OL
—
0.4
—
0.4
V
V
OL
—
0.5
—
0.5
V
V
OH
l
OH
= -4mA
V
IN
> V
CC
-0.2V or < 0.2V
2.4
—
2.4
—
V
NOTE:
1. At Vcc
<
2.0V leakages are undefined.
2689 tbl 05
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1,6)
(V
CC
= 5.0V
±
10%)
7132X20
(2)
7132X25
(3)
7132X35
7142X35
7132X55
7142X55
7132X100
7142X100
7142X25
(3)
Symbol
Parameter
Test Conditions
Version
Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max.
Unit
I
CC
Dynamic Operating
Current (Both Ports
Active)
CE
L
and
CE
R
= V
IL
, MIL.
Outputs open,
f = f
MAX
(4)
SA
LA
—
—
110
110
—
—
250
200
110
110
110
110
280
220
220
170
80
80
80
80
230
170
165
120
65
65
65
65
190
140
155
110
65
65
65
65
190
140
155
110
mA
COM'L. SA
LA
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE
L
and
CE
R
= V
IH
, MIL.
f = f
MAX
(4)
SA
LA
—
—
30
30
—
—
65
45
30
30
30
30
80
60
65
45
25
25
25
25
80
60
65
45
20
20
20
20
65
45
65
35
20
20
20
20
65
45
55
35
mA
COM'L. SA
LA
I
SB2
Standby Current
CE
"
A
"
=
V
IL
and
(One Port - TTL
Level Inputs)
MIL.
SA
LA
—
—
65
65
—
—
165
125
65
65
65
65
160
125
150
115
50
50
50
50
150
115
125
90
40
40
40
40
125
90
110
75
40
40
40
40
125
90
110
75
mA
CE
"
B
"
=
V
IH
(7)
Active Port Outputs COM'L. SA
Open, f = f
MAX
(4)
LA
I
SB3
Full Standby Current
(Both Ports - All
CMOS Level Inputs
CE
L
and
CE
R
> V
CC
-0.2V,
V
IN
> V
CC
-0.2V or
V
IN
< 0.2V,f = 0
(5)
MIL.
SA
LA
—
—
1.0
0.2
—
—
15
5
1.0
0.2
1.0
0.2
30
10
15
5
1.0
0.2
1.0
0.2
30
10
15
4
1.0
0.2
1.0
0.2
30
10
15
4
1.0
0.2
1.0
0.2
30
10
15
4
mA
COM'L. SA
LA
I
SB4
Full Standby Current
(One Port - All
CMOS Level Inputs)
CE
"
A
"
<
0.2V and
CE
"
B
"
> V
CC
-0.2V
(7)
V
IN
> V
CC
-0.2V or
V
IN
< 0.2V,
Active Port Outputs
Open, f = f
MAX
(4)
MIL.
SA
LA
—
—
60
60
—
—
155
115
60
60
60
60
155
115
145
105
45
45
45
45
145
105
110
85
40
40
40
40
110
85
100
70
40
40
40
40
110
80
95
70
mA
COM'L. SA
LA
NOTES:
1. 'X' in part numbers indicates power rating (SA or LA).
2. Com'l Only, 0
°
C to +70
°
C temperature range. PLCC package only.
3. Not available in DIP packages.
4. At f = f
Max
, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t
RC
, and using “AC TEST CONDITIONS”
of input levels of GND to 3V.
5. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
6. Vcc = 5V, T
A
=+25
°
C for Typ. and is not production tested. Vcc
DC
= 100mA (Typ.)
7. Port "A" may be either left or right port. Port "B" is opposite from port "A".
2689 tbl 04
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| IDT7132LA35PDG | 功能描述:IC SRAM 16KBIT 35NS 48DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
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