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參數(shù)資料
| 型號： | IDT7132SA100FI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| 中文描述： | 高速2K × 8雙端口靜態(tài)RAM的中斷 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 255K |
| 代理商： | IDT7132SA100FI |
8
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle No. 1, Either Side
(1)
Timing Waveform of Read Cycle No. 2, Either Side
(1)
NOTES:
1.
2.
R/
W
= V
IH,
CE
= V
IL,
and is
OE
= V
IL.
Address is valid prior to the coincidental with
CE
transition LOW.
t
BDD
delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations,
BUSY
has
no relationship to valid output data.
Start of valid data depends on which timing becomes effective last t
AOE
, t
ACE
,
t
AA
, and
t
BDD
.
Timing depends on which signal is asserted last,
OE
or
CE
.
Timing depends on which signal is de-asserted first,
OE
or
CE
.
3.
4.
5.
ADDRESS
DATA
OUT
t
RC
t
OH
PREVIOUS DATA VALID
t
AA
t
OH
DATA VALID
2692 drw 07
t
BDDH
(2,3)
BUSY
OUT
CE
t
HZ
(5)
t
LZ
(4)
t
PD
(3)
VALID DATA
t
PU
50%
OE
DATA
OUT
CURRENT
I
CC
I
SS
50%
2692 drw 08
t
LZ
(4)
t
HZ
(5)
t
ACE
t
AOE
(3)
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相關代理商/技術參數(shù) |
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|---|---|
| IDT7132SA100J | 功能描述:IC SRAM 16KBIT 100NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7132SA100J8 | 功能描述:IC SRAM 16KBIT 100NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7132SA100L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 100NS 48LCC |
| IDT7132SA100P | 功能描述:IC SRAM 16KBIT 100NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7132SA120CB | 制造商:Integrated Device Technology Inc 功能描述: |
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