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參數(shù)資料
| 型號： | IDT7132SA25FI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| 中文描述： | 2K X 8 DUAL-PORT SRAM, 25 ns, CQFP48 |
| 封裝： | 0.750 X 0.750 INCH, 0.110 INCH HEIGHT, CERAMIC, FP-48 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 255K |
| 代理商： | IDT7132SA25FI |
12
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Port-to-Port Read and
BUSY
(2,3,4)
Timing Waveform of Write with
BUSY
(4)
NOTES:
1.
2.
3.
4.
t
WH
must be met for both
BUSY
Input (IDT7142, slave) or Output (IDT7132, master).
BUSY
is asserted on port "B" blocking R/
W
"B"
, until
BUSY
"B"
goes HIGH.
t
WB
applies only to the slave version (IDT7142).
All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port "B" is opposite from port "A".
BUSY
"B"
2692 drw 12
R/
W
"A"
t
WP
t
WH
(1)
t
WB
R/
W
"B"
(2)
(3)
,
t
WC
t
WP
t
DW
t
DH
t
BDD
t
DDD
t
BDA
t
WDD
ADDR
"B"
DATA
OUT"B"
DATA
IN"A"
ADDR
"A"
MATCH
VALID
MATCH
VALID
R/
W
"A"
BUSY
"B"
t
APS
(1)
2692 drw 11
t
BAA
NOTES:
1.
2.
3.
4.
To ensure that the earlier of the two ports wins.
t
APS
is ignored for Slave (IDT7142).
CE
L
=
CE
R
= V
IL
OE
= V
IL
for the reading port.
All timing is the same for the left and right ports. Port "A" may be either the left or right port. Port "B" is opposite from port "A".
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| IDT7132SA25JI | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| IDT7132SA25L48I | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| IDT7132SA35PI | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| IDT7132SA55CI | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| IDT7132SA55FI | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7132SA25J | 功能描述:IC SRAM 16KBIT 25NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7132SA25J8 | 功能描述:IC SRAM 16KBIT 25NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7132SA25JI | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT7132SA25L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 25NS 48LCC |
| IDT7132SA35C | 功能描述:IC SRAM 16KBIT 35NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
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