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| 型號： | IDT7132SA25L48B |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 2K X 8 DUAL-PORT SRAM, 25 ns, CQCC48 |
| 封裝： | 0.570 X 0.570 INCH, 0.680 INCH HEIGHT, LCC-48 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 175K |
| 代理商： | IDT7132SA25L48B |
IDT7132SA/LA AND IDT7142SA/LA
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.02
2
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
IDT7132/
7142
P48-1
&
C48-2
DIP
TOP
VIEW
(3)
2692 drw 02
GND
I/O
6R
I/O
5R
I/O
4R
I/O
3R
I/O
2R
I/O
1R
I/O
0R
I/O
7L
I/O
6L
I/O
5L
I/O
4L
CE
R
R/
W
R
BUSY
R
A
10R
CE
L
R/
W
L
OE
L
A
0L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
BUSY
L
A
10L
V
CC
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
I/O
7R
I/O
3L
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
V
TERM
(2)
Terminal Voltage
with Respect to
GND
T
A
Operating
Temperature
T
BIAS
Temperature
Under Bias
T
STG
Storage
Temperature
I
OUT
DC Output
Current
Commercial
-0.5 to +7.0
Military
-0.5 to +7.0
Unit
V
0 to +70
-55 to +125
°
C
-55 to +125
-65 to +135
°
C
-55 to +125
-65 to +150
°
C
50
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of the specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.5V for more than 25% of the cycle time or
10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc +
0.5V.
RECOMMENDED
DC OPERATING CONDITIONS
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
V
IH
Input High Voltage
V
IL
Input Low Voltage
Min.
4.5
0
2.2
-0.5
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
2692 tbl 03
NOTES:
1. V
IL
(min.) = -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
PIN CONFIGURATIONS
(1,2)
(1)
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade
Temperature
Military
-55
°
C to +125
°
C
Commercial
0
°
C to +70
°
C
GND
0V
0V
V
CC
5.0V
±
10%
5.0V
±
10%
2692 tbl 01
2692 tbl 02
IDT7132/42
L48-1
&
F48-1
48-PIN LCC/ FLATPACK
TOP VIEW
(3)
INDEX
6 5
4 3
2
1
48 47 46 45 44 43
19 20 21 22 23
25 26 27 28 29 30
24
42
41
40
39
38
37
36
35
34
33
32
31
7
8
9
10
11
12
13
14
15
16
17
18
2692 drw 03
G
C
R
C
L
O
L
A
0
O
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
I/O
7R
I/O
6R
I
3
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
B
L
R
W
L
R
W
R
B
R
V
C
I
5
I
4
I
3
I
2
I
1
I
0
I
7
I
6
I
5
I
4
A
1
A
1
NOTES:
1. All Vcc pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. This text does not indicate orientation of the actual part-marking.
IDT7132/42
J52-1
52-PIN PLCC
TOP VIEW
(3)
INDEX
N
G
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
N/C
I/O
7R
46
45
44
43
42
41
40
39
38
37
36
35
34
I/O
3L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
8
9
10
11
12
13
14
15
16
17
18
19
20
47
48
49
50
51
52
1
2
3
4
5
6
7
33
32
31
30
29
28
27
26
25
24
23
22
21
2692 drw 04
A
1
V
C
A
1
I
6
A
0
O
L
N
C
L
C
R
N
B
L
R
W
L
R
W
R
B
R
I
5
I
4
I
3
I
2
I
1
I
0
I
7
I
6
I
5
I
4
NOTES:
1. All Vcc pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. This text does not indicate orientation of the actual part-marking.
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| IDT7132SA35C | 功能描述:IC SRAM 16KBIT 35NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT7132SA35CB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 35NS SB48 |
| IDT7132SA35J | 功能描述:IC SRAM 16KBIT 35NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7132SA35J8 | 功能描述:IC SRAM 16KBIT 35NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7132SA35L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 35NS 48LCC |
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