參數(shù)資料
型號： IDT7133SA35G
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： 100V N-Channel Trench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail
中文描述： 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68
封裝： CERAMIC, PGA-68
文件頁數(shù)： 5/16頁
文件大小： 140K
代理商： IDT7133SA35G
6.42
IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM Military, Industrial and Commercial Temperature Ranges
NOTES:
1.
2.
3.
V
CC
= 5V, T
A
= +25
°
C for Typ., and are not production tested. I
CCDC
= 180mA (typ.)
'X' in part number indicates power rating (SA or LA)
At f = f
MAX
,
address and control lines (except Output Enable) are cycling at the maximumfrequency read cycle of 1/ t
RC,
and using
“
AC Test Conditions" of input levels of
GND to 3V.
f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
Port "A" may be either left or right port. Port "B" is the opposite fromport "A".
4.
5.
*.
$-123,
!
3
&(#367!
7133X20
7143X20
Coml Only
7133X25
7143X25
Coml, Ind
& Military
7133X35
7143X35
Coml, Ind
& Military
Symbol
Parameter
Test Condition
Version
Typ.
(1)
Max.
Typ.
(1)
Max.
Typ.
(1)
Max.
Unit
I
CC
Dynamc Operating
Current
(Both Ports Active)
CE
= V
IL
, Outputs Disabled
f = f
MAX
(3)
COML
S
L
250
230
310
280
250
230
300
270
240
210
295
250
mA
MIL &
IND
S
L
____
____
____
____
250
230
330
300
240
220
325
295
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE
L
and
CE
R
= V
IH
f = f
MAX
(3)
COML
S
L
25
25
80
70
25
25
80
70
25
25
70
60
mA
MIL &
IND
S
L
____
____
____
____
25
25
90
80
25
25
75
65
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(4)
f=f
MAX
Active Port Outputs Disabled
COML
S
L
140
120
200
180
140
100
200
170
120
100
180
160
mA
MIL &
IND
S
L
____
____
____
____
140
100
230
190
120
100
200
180
I
SB3
Full Standby Current
(Both Ports -
CMOS Level Inputs)
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
COML
S
L
1.0
0.2
15
5
1.0
0.2
15
4
1.0
0.2
15
4
mA
MIL &
IND
S
L
____
____
____
____
1.0
0.2
30
10
1.0
0.2
30
10
I
SB4
Full Standby Current
(One Port -
CMOS Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Disabled
f = f
MAX
COML
S
L
140
120
190
170
140
120
190
170
120
100
170
150
mA
MIL &
IND
S
L
____
____
____
____
140
120
220
200
120
100
190
170
2746 tbl 07a
7133X45
7143X45
Coml &
Military
7133X55
7143X55
Coml, Ind
& Military
7133X70/90
7143X70/90
Coml &
Military
Symbol
Parameter
Test Condition
Version
Typ.
(1)
Max.
Typ.
(1)
Max.
Typ.
(1)
Max.
Unit
I
CC
Dynamc Operating
Current
(Both Ports Active)
CE
= V
IL
, Outputs Disabled
f = f
MAX
(3)
COML
S
L
230
210
290
250
230
210
285
250
230
210
280
250
mA
MIL &
IND
S
L
230
210
320
290
230
210
315
285
230
210
310
280
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE
L
and
CE
R
= V
IH
f = f
MAX
(3)
COML
S
L
25
25
75
65
25
25
70
60
25
25
70
60
mA
MIL &
IND
S
L
25
25
80
70
25
25
80
70
25
25
75
65
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(4)
f=f
MAX
Active Port Outputs Disabled
COML
S
L
120
100
190
170
120
100
180
160
120
100
180
160
mA
MIL &
IND
S
L
120
100
210
190
120
100
210
190
120
100
200
180
I
SB3
Full Standby Current
(Both Ports -
CMOS Level Inputs)
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
COML
S
L
1.0
0.2
15
4
1.0
0.2
15
4
1.0
0.2
15
4
mA
MIL &
IND
S
L
1.0
0.2
30
10
1.0
0.2
30
10
1.0
0.2
30
10
I
SB4
Full Standby Current
(One Port -
CMOS Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Disabled
f = f
MAX
(3)
COML
S
L
120
100
180
160
120
100
170
150
120
100
170
150
mA
MIL &
IND
S
L
120
100
200
180
120
100
200
180
120
100
190
170
2746 tbl 07b
相關(guān)PDF資料
PDF描述
IDT7133SA35GB 100V N-Channel Trench MOSFET
IDT7133SA35GI HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
IDT7133SA35J HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
IDT7133SA35JB HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
IDT7133SA35JI HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7133SA35GB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 55NS 68PGA
IDT7133SA35J 功能描述:IC SRAM 32KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI
IDT7133SA35J8 功能描述:IC SRAM 32KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI
IDT7133SA35JG 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:SRAM DUAL PORT 2KX16 7133 PLCC68 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:SRAM DUAL PORT 2KX16 7133 TUBE18 制造商:Integrated Device Technology Inc 功能描述:SRAM DUAL PORT 2KX16, 7133, PLCC68 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:MEMORY, SRAM, 32KBIT, 35NS, PLCC-68; Memory Size:32Kbit; Memory Configuration:2K x 16; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:PLCC; No. of Pins:68; Access Time:35ns; Operating Temperature Min:0C ;RoHS Compliant: Yes
IDT7133SA35PF 功能描述:IC SRAM 32KBIT 35NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI
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