參數(shù)資料
型號(hào)： IDT7134LA35C
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： POWER QUICC - NO LEAD
中文描述： 4K X 8 DUAL-PORT SRAM, 35 ns, CDIP48
封裝： SIDE BRAZED, CERAMIC, DIP-48
文件頁(yè)數(shù)： 5/9頁(yè)
文件大小： 110K
代理商： IDT7134LA35C
6.04
5
IDT7134SA/LA
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE
(4)
(CONT'D)
7134X45
7134X55
7134X70
Symbol
READ CYCLE
t
RC
t
AA
t
ACE
t
AOE
t
OH
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Output Low-Z Time
(1, 2)
Output High-Z Time
(1, 2)
Chip Enable to Power Up Time
(2)
Chip Disable to Power Down Time
(2)
45
—
—
—
0
—
45
45
25
—
55
—
—
—
0
—
55
55
30
—
70
—
—
—
0
—
70
70
40
—
ns
ns
ns
ns
ns
t
LZ
5
—
5
—
5
—
ns
t
HZ
—
20
—
25
—
30
ns
t
PU
0
—
0
—
0
—
ns
t
PD
—
45
—
50
—
50
ns
NOTES:
1. Transition is measured
±
500mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. (Commercial only) 0
°
C to +70
°
C temperature range only.
4. “X” in part number indicates power rating (SA or LA).
2720 tbl 09
TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE
(1, 2, 3)
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE
(4)
7134X20
(3)
7134X25
7134X35
Symbol
READ CYCLE
t
RC
t
AA
t
ACE
t
AOE
t
OH
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Output Low-Z Time
(1, 2)
Output High-Z Time
(1, 2)
Chip Enable to Power Up Time
(2)
Chip Disable to Power Down Time
(2)
20
—
—
—
0
—
20
20
15
—
25
—
—
—
0
—
25
25
15
—
35
—
—
—
0
—
35
35
20
—
ns
ns
ns
ns
ns
t
LZ
0
—
0
—
0
—
ns
t
HZ
—
15
—
15
—
20
ns
t
PU
0
—
0
—
0
—
ns
t
PD
—
20
—
25
—
35
ns
NOTES:
1. Timing depends on which signal is asserted last,
OE
or
CE
.
2. Timing depends on which signal is de-asserted first,
OE
or
CE
.
3. R/
W
= V
IH
.
ADDRESS
DATA
OUT
PREVIOUS DATA VALID
DATA VALID
t
OH
t
OH
t
AA
t
RC
2720 drw 08
相關(guān)PDF資料
PDF描述
IDT7134LA35CB HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
IDT7134LA35F POWER QUICC - NO LEAD
IDT7134SA25L48 HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
IDT7134SA25PB HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7134LA35CB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 35NS SB48
IDT7134LA35FB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 35NS 48FPACK
IDT7134LA35J 功能描述:IC SRAM 32KBIT 35NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤(pán) 其它名稱:71V67703S75PFGI
IDT7134LA35J8 功能描述:IC SRAM 32KBIT 35NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤(pán) 其它名稱:71V67703S75PFGI
IDT7134LA35JI 制造商:Integrated Device Technology Inc 功能描述:
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