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參數(shù)資料
| 型號(hào)： | IDT7134SA55L48 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 4K X 8 DUAL-PORT SRAM, 55 ns, CQCC48 |
| 封裝： | LCC-48 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 110K |
| 代理商： | IDT7134SA55L48 |
6.04
3
IDT7134SA/LA
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(V
CC
= 5.0V
±
10%)
7134X20
(4)
7134X25
7134X35
7134X45
7134X55
7134X70
Symbol
Parameter
Test Conditions
Version
Typ.
(2)
Max. Typ.
(2)
Max. Typ.
(2)
Max. Typ.
(2)
Max. Typ.
(2)
Max. Typ.
(2)
Max. Unit
I
CC
Dynamic Operating
Current
CE
= V
IL
Outputs Open
f = f
MAX
(3)
MIL.
S
L
—
—
—
—
160
160
310
260
150
150
300
250
140
140
280
240
140
140
270
220
140
140
270
220
mA
(Both Ports Active)
COM’L.S
170
170
280
240
160
160
280
220
150
150
260
210
140
140
240
200
140
140
240
200
140
140
240
200
L
I
SB1
Standby Current
(Both Ports—TTL
CE
L
and
CE
R
= V
IH
f = f
MAX
(3)
MIL.
S
L
—
—
—
—
25
25
100
80
25
25
75
55
25
25
70
50
25
25
70
50
25
25
70
50
mA
Level Inputs)
COM’L.S
25
25
110
80
25
25
80
50
25
25
75
45
25
25
70
40
25
25
70
40
25
25
70
40
L
I
SB2
Standby Current
(One Port—TTL
CE
"A"
= V
IL
and
CE
"B"
= V
IH
Active Port Outputs COM’L.S
Open, f = f
MAX
(3)
MIL.
S
L
—
—
—
—
95
95
210
170
85
85
200
160
75
75
190
150
75
75
180
150
75
75
180
150
mA
Level Inputs)
105
105
180
150
95
95
180
140
85
85
170
130
75
75
160
130
75
75
160
130
75
75
160
130
L
I
SB3
Full Standby Current Both Ports
CE
L
and MIL.
(Both Ports—All
CE
R
≥
V
CC
- 0.2V
CMOS Level Inputs) V
IN
≥
V
CC
- 0.2V or
V
IN
≤
0.2V, f = 0
(3)
Full Standby Current One Port
CE
or
(One Port—All
CE
"B"
≥
V
CC
- 0.2V
CMOS Level Inputs) V
IN
≥
V
CC
- 0.2V or
V
IN
≤
0.2V
Active Port Outputs
Open, f = f
MAX
(3)
S
L
—
—
—
—
1.0
0.2
30
10
1.0
0.2
30
10
1.0
0.2
30
10
1.0
0.2
30
10
1.0
0.2
30
10
mA
COM’L.S
1.0
0.2
15
4.5
1.0
0.2
15
4.0
1.0
0.2
15
4.0
1.0
0.2
15
4.0
1.0
0.2
15
4.0
1.0
0.2
15
4.0
L
I
SB4
MIL.
S
L
—
—
—
—
95
95
210
150
85
85
190
130
75
75
180
120
75
75
170
120
75
75
170
120
mA
COM’L.S
105
105
170
130
95
95
170
120
85
85
160
110
75
75
150
100
75
75
150
100
75
75
150
100
L
NOTES:
1. “X” in part number indicates power rating (SA or LA).
2. V
CC
= 5V, T
A
= +25
°
C for typical, and parameters are not production tested.
3. f
MAX
= 1/t
RC
= All inputs cycling at f = 1/t
RC
(except Output Enable). f = 0 means no address or control lines change. Applies only to inputs at CMOS level
standby I
SB3.
4. (Commercial only) 0
°
C to +70
°
C temperature range.
2720 tbl 06
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Temperature
–55
°
C to +125
°
C
0
°
C to +70
°
C
Grade
Military
Commercial
GND
0V
0V
V
CC
5.0V
±
10%
5.0V
±
10%
2720 tbl 03
RECOMMENDED DC OPERATING CONDITIONS
Symbol
V
CC
GND
V
IH
Parameter
Supply Voltage
Ground
Input High Voltage
Min.
4.5
0
2.2
Typ.
5.0
0
—
Max.
5.5
0
6.0
(2)
Unit
V
V
V
V
IL
Input Low Voltage
–0.5
(1)
—
0.8
V
NOTES:
1. V
IL
(min.) > –1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
2720 tbl 04
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE
(V
CC
= 5V
±
10%)
IDT7134SA
Min.
IDT7134LA
Min.
Symbol
Parameter
Test Conditions
Max.
Max.
Unit
|I
LI
|
Input Leakage Current
(1)
V
CC
= 5.5V, V
IN
= 0V to V
CC
—
10
—
5
μ
A
μ
A
V
V
V
|I
LO
|
V
OL
Output Leakage Current
Output Low Voltage
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 6mA
I
OL
= 8mA
I
OH
= –4mA
—
—
—
2.4
10
0.4
0.5
—
—
—
—
2.4
5
0.4
0.5
—
V
OH
Output High Voltage
NOTE:
1. At Vcc
≤
2.0V input leakages are undefined.
2720 tbl 05
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| IDT7134SA55L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 55NS 48LCC |
| IDT7134SA55P | 功能描述:IC SRAM 32KBIT 55NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7134SA70CB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 70NS SB48 |
| IDT7134SA70J | 功能描述:IC SRAM 32KBIT 70NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7134SA70J8 | 功能描述:IC SRAM 32KBIT 70NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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