- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377299 > IDT7140SA20PF (INTEGRATED DEVICE TECHNOLOGY INC) HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | IDT7140SA20PF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 1K X 8 DUAL-PORT SRAM, 20 ns, PQFP64 |
| 封裝： | TQFP-64 |
| 文件頁數(shù)： | 12/14頁 |
| 文件大小： | 218K |
| 代理商： | IDT7140SA20PF |
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.01
12
TRUTH TABLES
TABLE I — NON-CONTENTION
READ/WRITE CONTROL
(4)
Left or Right Port
(1)
R/
W
CE
OE
D
0–7
X
H
X
Function
Z
Port Disabled and in Power-
Down Mode, I
SB2
or I
SB4
CE
R
=
CE
L
=
V
IH
, Power-Down
Mode, I
SB1
or I
SB3
Data on Port Written Into Memory
(2)
DATA
OUT
Data in Memory Output on Port
(3)
Z
High Impedance Outputs
X
H
X
Z
L
H
H
L
L
L
X
L
H
DATA
IN
NOTES:
1. A
0L
– A
10L
≠
A
0R
– A
10R
.
2. If
BUSY
= L, data is not written.
3. If
BUSY
= L, data may not be valid, see t
WDD
and t
DDD
timing.
4. 'H' = V
IH
, 'L' = V
IL
, 'X' = DON’T CARE, 'Z' = HIGH IMPEDANCE
2689 tbl 13
TABLE III — ADDRESS BUSY ARBITRATION
Inputs
A
0L
-A
9L
CE
L
CE
R
A
0R
-A
9R
BUSY
L(1)
X
X
NO MATCH
H
X
MATCH
X
H
MATCH
L
L
MATCH
(2)
Outputs
BUSY
R(1)
H
H
H
(2)
Function
Normal
Normal
Normal
Write Inhibit
(3)
H
H
H
NOTES:
1. Pins
BUSY
L
and
BUSY
R
are both outputs for IDT7130 (master). Both are
inputs for IDT7140 (slave).
BUSY
X
outputs on the IDT7130 are open drain,
not push-pull outputs. On slaves the
BUSY
X
input internally inhibits writes.
2. 'L' if the inputs to the opposite port were stable prior to the address and
enable inputs of this port. 'H' if the inputs to the opposite port became
stable after the address and enable inputs of this port. If tAPS is not met,
either
BUSY
L
or
BUSY
R
= Low will result.
BUSY
L
and
BUSY
R
outputs can
not be low simultaneously.
3. Writes to the left port are internally ignored when
BUSY
L
outputs are
driving Low regardless of actual logic level on the pin. Writes to the right
port are internally ignored when
BUSY
R
outputs are driving Low regard-
less of actual logic level on the pin.
2689 tbl 15
TABLE II — INTERRUPT FLAG
(1,4)
Left Port
OE
L
Right Port
R
X
L
L
X
R/
W
L
L
X
X
X
CE
L
L
X
X
L
A
9L
– A
0L
3FF
X
X
3FE
INT
L
X
X
L
(3)
H
(2)
R/
W
R
X
X
L
X
CE
OE
R
X
L
X
X
A
9L
– A
0R
X
3FF
3FE
X
INT
R
L
(2)
H
(3)
X
X
Function
X
X
X
L
Set Right
INT
R
Flag
Reset Right
INT
R
Flag
Set Left
INT
L
Flag
Reset Left
INT
L
Flag
NOTES
:
1. Assumes
BUSY
L
=
BUSY
R
= V
IH
2. If
BUSY
L
= V
IL
, then No Change.
3. If
BUSY
R
= V
IL
, then No Change.
4. 'H' = HIGH,' L' = LOW,' X' = DON’T CARE
2689 tbl 14
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7140SA20PFB | HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM |
| IDT7140SA20TF | HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM |
| IDT7140SA20TFB | HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM |
| IDT7140SA25C | HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM |
| IDT7140SA25CB | HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7140SA20PF8 | 功能描述:IC SRAM 8KBIT 20NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7140SA25J | 功能描述:IC SRAM 8KBIT 25NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7140SA25J8 | 功能描述:IC SRAM 8KBIT 25NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7140SA25PF | 功能描述:IC SRAM 8KBIT 25NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7140SA25PF8 | 功能描述:IC SRAM 8KBIT 25NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。