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參數(shù)資料
| 型號： | IDT71421LA25JI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| 中文描述： | 2K X 8 DUAL-PORT SRAM, 25 ns, PQCC52 |
| 封裝： | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 255K |
| 代理商： | IDT71421LA25JI |
8
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle No. 1, Either Side
(1)
Timing Waveform of Read Cycle No. 2, Either Side
(1)
NOTES:
1.
2.
R/
W
= V
IH,
CE
= V
IL,
and is
OE
= V
IL.
Address is valid prior to the coincidental with
CE
transition LOW.
t
BDD
delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations,
BUSY
has
no relationship to valid output data.
Start of valid data depends on which timing becomes effective last t
AOE
, t
ACE
,
t
AA
, and
t
BDD
.
Timing depends on which signal is asserted last,
OE
or
CE
.
Timing depends on which signal is de-asserted first,
OE
or
CE
.
3.
4.
5.
ADDRESS
DATA
OUT
t
RC
t
OH
PREVIOUS DATA VALID
t
AA
t
OH
DATA VALID
2692 drw 07
t
BDDH
(2,3)
BUSY
OUT
CE
t
HZ
(5)
t
LZ
(4)
t
PD
(3)
VALID DATA
t
PU
50%
OE
DATA
OUT
CURRENT
I
CC
I
SS
50%
2692 drw 08
t
LZ
(4)
t
HZ
(5)
t
ACE
t
AOE
(3)
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| IDT71321SA25JI | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| IDT71321SA25TF | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| IDT71421SA25TF | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
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| IDT71321LA25TFI | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71421LA25JI8 | 功能描述:IC SRAM 16KBIT 25NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT71421LA25PF | 功能描述:IC SRAM 16KBIT 25NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT71421LA25PF8 | 功能描述:IC SRAM 16KBIT 25NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT71421LA25PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 25NS 64TQFP |
| IDT71421LA25PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 25NS 64TQFP |
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