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參數(shù)資料
| 型號(hào)： | IDT7142SA25JB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 2K X 8 DUAL-PORT SRAM, 25 ns, PQCC52 |
| 封裝： | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 175K |
| 代理商： | IDT7142SA25JB |
6.02
9
IDT7132SA/LA AND IDT7142SA/LA
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
BUSY
R
2692 drw 12
R/
W
L
t
WP
t
WH
t
WB
R/
W
R
(2)
(1)
TIMING WAVEFORM OF WRITE WITH
BUSY
(3)
NOTES:
1. t
WH
must be met for both
BUSY
Input (IDT7142, slave) or Output (IDT7132, master).
2.
BUSY
is asserted on port 'B' blocking R/
W
'B', until
BUSY
'B' goes High.
3. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port 'B' is opposite from port 'A'.
TIMING WAVEFORM OF BUSY ARBITRATION CONTROLLED BY
CE
TIMING
(1)
t
APS
ADDR
'A'
and
'B'
ADDRESSES MATCH
t
BAC
t
BDC
CE
'B'
CE
'A'
BUSY
'A'
2692 drw 13
(2)
TIMING WAVEFORM OF BUSY ARBITRATION CONTROLLED BY ADDRESS MATCH TIMING
(1)
BUSY
'B'
ADDRESSES DO NOT MATCH
ADDRESSES MATCH
t
APS
ADDR
'A'
ADDR
'B'
2692 drw 14
(2)
t
BAA
t
BDA
t
RC
or
t
WC
NOTES:
1. All timing is the same for left and right ports. Port 'A' may be either left or right port. Port 'B' is the opposite from port 'A'.
2. If t
APS
is not satisified, the
BUSY
will be asserted on one side or the other, but there is no guarantee on which side
BUSY
will be asserted (7132 only).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7142LA25JB | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
| IDT7132SA25PB | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
| IDT7132LA | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
| IDT7132LA20L48 | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
| IDT7132LA20L48B | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7142SA25L48 | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 2Kx8, 48 Pin, Ceramic, LLCC |
| IDT7142SA35C | 功能描述:IC SRAM 16KBIT 35NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT7142SA35CB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 35NS SB48 |
| IDT7142SA35J | 功能描述:IC SRAM 16KBIT 35NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7142SA35J8 | 功能描述:IC SRAM 16KBIT 35NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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