參數(shù)資料
型號(hào): IDT7143LA35PF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
中文描述: 2K X 16 DUAL-PORT SRAM, 35 ns, PQFP100
封裝: TQFP-100
文件頁(yè)數(shù): 2/16頁(yè)
文件大小: 140K
代理商: IDT7143LA35PF
6.42
IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM Military, Industrial and Commercial Temperature Ranges
2746 drw 02
10
11
12
13
14
15
16
IDT7133/43
J68-1 / F68-1
(4)
68-Pin PLCC/Flatpack
Top View
(5)
50
49
48
47
46
45
44
INDEX
17
18
19
20
21
22
23
24
25
26
51
52
53
54
55
56
57
58
59
60
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
A
6L
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
BUSY
L
CE
L
CE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
BUSY
R
I/O
9L
I/O
10L
I/O
11L
I/O
12L
I/O
13L
I/O
14L
I/O
15L
V
CC
(1)
GND
(2)
I/O
0R
I/O
1R
I/O
2R
I/O
3R
I/O
4R
I/O
5R
I/O
6R
I/O
7R
I
1
I
2
I
3
I
4
I
5
I
6
I
7
I
8
V
C
(
A
1
A
9
A
8
A
7
R
W
L
O
L
I
9
I
1
I
1
I
1
I
1
I
1
A
6
A
7
A
8
A
9
I
8
A
1
G
(
O
R
R
W
R
R
W
R
I
1
I
0
R
W
L
!
memory systemapplications results in full-speed, error-free operation
without the need for additional discrete logic.
Both devices provide two independent ports with separate control,
address, and I/O pins that permt independent, asynchronous access
for reads or writes to any location in memory. An automatic power
down feature, controlled by
CE
, permts the on-chip circuitry of each
port to enter a very low standby power mode.
Fabricated using IDT
s CMOS high-performance technology, these
devices typically operate on only 1,150mW of power. Low-power (LA)
versions offer battery backup data retention capability, with each port
typically consumng 200μW for a 2V battery.
The IDT7133/7143 devices have identical pinouts. Each is packed
in a 68-pin ceramc PGA, 68-pin flatpack, 68-pin PLCC and 100-pin
TQFP. Mlitary grade product is manufactured in compliance with the
latest revision of MIL-PRF-38535 QML, making it ideally suited to
mlitary temperature applications demanding the highest level of
performance and reliability.
NOTES:
1. Both V
CC
pins must be connected to the power supply to ensure reliable
operation.
2. Both GND pins must be connected to the ground supply to ensure reliable
operation.
3. J68-Package body is approximately 0.95 in x 0.95 in x 0.17 in.
F68-Package body is approximately 1.18 in x 1.18 in x 0.16 in.
PN100-Package body is approximately 14mmx 14mmx 1.4mm
4. This package code is used to reference the package diagram
5. This text does not indicate orientation of the actual part-marking.
Index
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
10099 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
IDT7133/43PF
PN100-1
(4)
100-Pin TQFP
Top View
(5)
N/C
N/C
N/C
N/C
I/O
10L
I/O
11L
I/O
12L
I/O
13L
GND
I/O
14L
I/O
15L
V
CC
GND
I/O
0R
I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
I/O
6R
N/C
N/C
N/C
N/C
2746 drw 03
N/C
N/C
N/C
N/C
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
N/C
BUSY
L
GND
N/C
BUSY
R
N/C
A
0R
A
1R
A
2R
A
3R
A
4R
N/C
N/C
N/C
N/C
I
9
I
8
I
7
I
6
I
5
I
4
I
3
I
2
G
I
1
I
0
O
L
V
C
R
W
L
C
L
R
W
L
N
N
N
A
1
A
9
A
8
A
7
A
6
I
7
I
8
I
9
I
1
I
1
I
1
I
1
I
1
G
I
1
R
W
R
G
N
N
A
1
A
9
A
8
A
7
A
6
A
5
N
N
N
O
R
C
R
R
W
R
,
相關(guān)PDF資料
PDF描述
IDT7143LA35PFB HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
IDT7143LA35PFI HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
IDT7143LA45F HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
IDT7143LA45G HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
IDT7143LA45J HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7143LA35PF8 功能描述:IC SRAM 32KBIT 35NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT7143LA55G 功能描述:IC SRAM 32KBIT 55NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT7143LA55GB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 55NS 68PGA
IDT7143LA55J 功能描述:IC SRAM 32KBIT 55NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT7143LA55J8 功能描述:IC SRAM 32KBIT 55NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI