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參數(shù)資料
| 型號： | IDT7164S30YB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | CMOS STATIC RAM 64K (8K x 8-BIT) |
| 中文描述： | 64K的的CMOS靜態(tài)RAM（8K的× 8位） |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 104K |
| 代理商： | IDT7164S30YB |
6.1
6
IDT7164S/L
CMOS STATIC RAM 64K (8K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS (Continued)
(V
CC
= 5.0V
±
10%, All Temperature Ranges)
7164S35
7164L35
Min.
7164S45
(2)
7164L45
(2)
Min.
7164S55
(2)
7164L55
(2)
Min.
7164S70/85
(2)
7164L70/85
(2)
Min.
Symbol
Parameter
Max.
Max.
Max.
Max.
Unit
Read Cycle
t
RC
Read Cycle Time
35
—
45
—
55
—
70/85
—
ns
t
AA
t
ACS1(3)
t
ACS2(3)
t
CLZ1,2(4)
Chip Select-1, 2 to Output in Low-Z
Address Access Time
—
35
—
45
—
55
—
70/85
ns
Chip Select-1 Access Time
—
35
—
45
—
55
—
70/85
ns
Chip Select-2 Access Time
—
40
—
45
—
55
—
70/85
ns
5
—
5
—
5
—
5
—
ns
t
OE
t
OLZ(4)
t
CHZ1,2(4)
Chip Select-1, 2 to Output in High-Z
t
OHZ(4)
Output Disable to Output in High-Z
Output Enable to Output Valid
—
18
—
25
—
30
—
35/40
ns
Output Enable to Output in Low-Z
0
—
0
—
0
—
0
—
ns
—
15
—
20
—
25
—
30/35
ns
—
15
—
20
—
25
—
30/35
ns
t
OH
t
PU(4)
t
PD(4)
Output Hold from Address Change
5
—
5
—
5
—
5
—
ns
Chip Select to Power Up Time
0
—
0
—
0
—
0
—
ns
Chip Deselect to Power Down Time
—
35
—
45
—
55
—
70/85
ns
Write Cycle
t
WC
Write Cycle Time
35
—
45
—
55
—
70/85
—
ns
t
CW1, 2
Chip Select to End-of-Write
25
—
33
—
50
—
60/75
—
ns
t
AW
Address Valid to End-of-Write
25
—
33
—
50
—
60/75
—
ns
t
AS
Address Set-up Time
0
—
0
—
0
—
0
—
ns
t
WP
Write Pulse Width
Write Recovery Time
(
CS
1
,
WE
)
Write Recovery Time
(CS
2
)
25
—
25
—
50
—
60/75
—
ns
t
WR1
0
—
0
—
0
—
0
—
ns
t
WR2
t
WHZ(4)
5
—
5
—
5
—
5
—
ns
Write Enable to Output in High-Z
—
14
—
18
—
25
—
30/35
ns
t
DW
Data to Write Time Overlap
Data Hold from Write Time
(
CS
1
,
WE
)
Data Hold from Write Time
(CS
2
)
15
—
20
—
25
—
30/35
—
ns
t
DH1
0
—
0
—
0
—
0
—
ns
t
DH2
t
OW(4)
5
—
5
—
5
—
5
—
ns
Output Active from End-of-Write
4
—
4
—
4
—
4
—
ns
NOTES:
1. 0
°
to +70
°
C temperature range only.
2. –55
°
C to +125
°
C temperature range only. Also available: 100ns military devices.
3. Both chip selects must be active for the device to be selected.
4. This parameter is guaranteed by device characterization, but is not production tested.
2967 tbl 11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7164S35DB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 28CDIP |
| IDT7164S35P | 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:IC SRAM 64K 7164 DIP28 |
| IDT7164S35PG | 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:IC SRAM 64K 7164 DIP28 |
| IDT7164S35TDB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 28CDIP |
| IDT7164S35TPG | 功能描述:IC SRAM 64KBIT 35NS 28DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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