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參數(shù)資料
| 型號(hào)： | IDT7187S25DB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | CMOS STATIC RAM 64K (64K x 1-BIT) |
| 中文描述： | 64K X 1 STANDARD SRAM, 25 ns, CDIP22 |
| 封裝： | 0.300 INCH, CERAMIC, DIP-22 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 70K |
| 代理商： | IDT7187S25DB |
6.2
4
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY TEMPERATURE RANGE
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(L Version Only) V
HC
= V
CC
- 0.2V, V
LC
= 0.2V
Typ.
(1)
V
CC
@
Max.
V
CC
@
Symbol
V
DR
I
CCDR
Parameter
Test Condition
Min.
2.0
—
—
0
2.0v
—
10
10
—
3.0V
—
15
15
—
2.0V
—
600
150
—
3.0V
—
900
225
—
Unit
V
μ
A
V
CC
for Data Retention
Data Retention Current
—
MIL.
COM’L.
t
CDR(3)
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
CS
≥
V
HC
V
IN
≥
V
HC
or
≤
V
LC
ns
t
R(3)
|I
LI
|
(3)
t
RC(2)
—
—
—
—
—
—
2
—
2
ns
μ
A
NOTES:
1. T
A
= +25
°
C.
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed, but not tested.
2986 tbl 09
LOW V
CC
DATA RETENTION WAVEFORM
2986 drw 04
DATA
RETENTION
MODE
4.5V
4.5V
V
DR
≥
2V
V
IH
V
IH
t
R
t
CDR
V
CC
CS
V
DR
DC ELECTRICAL CHARACTERISTICS
(1)
(V
CC
= 5V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
7187S25
7187L25
7187S35
7187L35
7187S45
7187L45
7187S55/70
7187L55/70
7187S85
7187L85
Symbol
Parameter
Power
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Unit
I
CC1
Operating Power
Supply Current
CS
= V
IL
, Outputs Open
V
CC
= Max., f = 0
(2)
Dynamic Operating
Current
CS
= V
IL
, Outputs Open
V
CC
= Max., f = f
MAX(2)
Standby Power Supply
Current (TTL Level)
CS
≥
V
IH
, V
CC
= Max.,
Outputs Open, f = f
MAX(2)
Full Standby Power
Supply Current (CMOS
Level)
CS
≥
V
HC
,
V
CC
=Max., V
IN
≥
V
HC
or
V
IN
≤
V
LC
, f = 0
(2)
S
—
105
—
105
—
105
—
105
—
105
mA
L
—
85
—
85
—
85
—
85
—
85
I
CC2
S
—
130
—
120
—
120
—
120
—
120
mA
L
—
110
—
100
—
95
—
90
—
90
I
SB
S
—
55
—
50
—
50
—
50
—
50
mA
L
—
50
—
40
—
35
—
30/28
—
28
I
SB1
S
—
20
—
20
—
20
—
20
—
20
mA
L
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
NOTES:
1. All values are maximum guaranteed values.
2. At f = f
MAX
address and data inputs are cycling at the maximum frequency of read cycles of 1/t
RC
. f = 0 means no input lines change.
2986 tbl 08
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7187S25L22B | CMOS STATIC RAM 64K (64K x 1-BIT) |
| IDT7187S35DB | CMOS STATIC RAM 64K (64K x 1-BIT) |
| IDT7187S35L22B | CMOS STATIC RAM 64K (64K x 1-BIT) |
| IDT7188L85DB | CMOS STATIC RAM 64K 16K x 4-BIT |
| IDT7188S85DB | CMOS STATIC RAM 64K 16K x 4-BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7187S35CB | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT7187S45CB | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 64Kx1, 22 Pin, Ceramic, DIP |
| IDT7187S45DB | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 64Kx1, 22 Pin, Ceramic, DIP |
| IDT7187S45PI | 制造商:Integrated Device Technology Inc 功能描述:7187S45PI |
| IDT7187S85CB | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 64Kx1, 22 Pin, Ceramic, DIP |
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