參數(shù)資料
型號: IDT71P73604167BQ
廠商: Integrated Device Technology, Inc.
英文描述: 18Mb Pipelined DDR⑩II SRAM Burst of 4
中文描述: 35.7流水線的DDR II SRAM的突發(fā)⑩4
文件頁數(shù): 12/25頁
文件大小: 648K
代理商: IDT71P73604167BQ
6.42
12
IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit)
18 Mb DDR II SRAM Burst of 4 Commercial Temperature Range
DC Electrical Characteristics Over the Operating Temperature and
Supply Voltage Range
(V
DD
= 1.8 ± 100mV, V
DDQ
= 1.4V to 1.9V)
NOTES:
1. Operating Current is measured at 100% bus utilization.
2. Standby Current is only after all pending read and write burst operations are completed.
3. Outputs are impedance-controlled. IOH = -(VDDQ/2)/(RQ/5) and is guaranteed by device characterization for 175
< RQ < 350
.
This
parameter is tested at RQ = 250
,
which gives a nomnal 50
output impedance.
4. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) and is guaranteed by device characterization for 175
< RQ < 350
.
This
parameter is tested at RQ = 250
,
which gives a nomnal 50
output impedance.
5. This measurement is taken to ensure that the output has the capability of pulling to the VDDQ rail, and is not intended to be used as an impedance
measurement point.
6. This measurement is taken to ensure that the output has the capability of pulling to Vss, and is not intended to be used as an impedance
measurement point.
7. Programmable Impedance Mode.
Parameter
Symbol
Test Conditions
Mn
Max
Unit
Note
Input Leakage Current
l
lL
VDD = Max VIN = VSS to VDDQ
-2
+2
Output Leakage Current
l
OL
Output Disabled
-2
+2
Operating Current
(x36): DDR
I
DD
VDD = Max,
I
OUT
= 0mA (outputs open),
Cycle Time > t
KHKH
Mn
250MHz
-
800
mA
1
200MHz
-
700
167MHz
-
600
Operating Current
(x18): DDR
I
DD
VDD = Max,
I
OUT
= 0mA (outputs open),
Cycle Time > t
KHKH
Mn
250MHz
-
650
mA
1
200MHz
-
550
167MHz
-
475
Operating Current
(x9,x8): DDR
I
DD
VDD = Max,
I
OUT
= 0mA (outputs open),
Cycle Time > t
KHKH
Mn
250MHz
-
650
mA
1
200MHz
-
550
167MHz
-
475
Standby Current NOP
I
SB1
Device Deselected (in NOP state),
I
OUT
= 0mA (outputs open),
f=Max,
All inputs < 0.2V or > VDD -0.2V
250MHz
-
325
mA
2
200MHz
-
300
167MHz
-
275
Output High Voltage
VOH
1
RQ = 250
, I
OH
= -15mA
V
DDQ
/2-0.12
V
DDQ
/2+0.12
V
3, 7
Output LowVoltage
VOL
1
RQ = 250
, I
OL
= 15mA
V
DDQ
/2-0.12
V
DDQ
/2+0.12
V
4, 7
Output High Voltage
VOH
2
I
OH
= -0.1mA
V
DDQ
-0.2
V
DDQ
V
5
Output LowVoltage
VOL
2
I
OL
= 0.1mA
V
SS
0.2
V
6
6431 tbl 10C
相關PDF資料
PDF描述
IDT71P73604200BQ 18Mb Pipelined DDR⑩II SRAM Burst of 4
IDT71P73604250BQ 18Mb Pipelined DDR⑩II SRAM Burst of 4
IDT71P73804 18Mb Pipelined DDR⑩II SRAM Burst of 4
IDT71P73804167BQ 18Mb Pipelined DDR⑩II SRAM Burst of 4
IDT71P73804200BQ 18Mb Pipelined DDR⑩II SRAM Burst of 4
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IDT71P73604S167BQ8 功能描述:IC SRAM 18MBIT 167MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA(7x7) 包裝:托盤
IDT71P73604S200BQ 功能描述:IC SRAM 18MBIT 200MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA(7x7) 包裝:托盤
IDT71P73604S200BQ8 功能描述:IC SRAM 18MBIT 200MHZ 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA(7x7) 包裝:托盤
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