參數(shù)資料
型號: IDT71V2548SA133BG
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
中文描述: 256K X 18 ZBT SRAM, 4.2 ns, PBGA119
封裝: 14 X 22 MM, PLASTIC, MS-028AA, BGA-119
文件頁數(shù): 14/28頁
文件大?。?/td> 1004K
代理商: IDT71V2548SA133BG
6.42
14
IDT71V2546, IDT71V2548, 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs
with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Read Operation with Chip Enable Used
(1)
NOTES:
1. H = High; L = Low; X = Dont Care; = Dont Know; Z = High Impedance.
2.
CE
= L is defined as
CE
1
= L,
CE
2
= L and CE
2
= H.
CE
= H is defined as
CE
1
= H,
CE
2
= H or CE
2
= L.
3. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up.
Write Operation with Chip Enable Used
(1)
NOTES:
1. H = High; L = Low; X = Dont Care; = Dont Know; Z = High Impedance.
2.
CE
= L is defined as
CE
1
= L,
CE
2
= L and CE
2
= H.
CE
= H is defined as
CE
1
= H,
CE
2
= H or CE
2
= L.
Cycle
Address
R/
W
ADV/
LD
CE
(2)
CEN
BW
x
OE
I/O
(3)
Comments
n
X
X
L
H
L
X
X
Deselected.
n+1
X
X
L
H
L
X
X
Deselected.
n+2
A
0
H
L
L
L
X
X
Z
Address and Control meet setup
n+3
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+4
A
1
H
L
L
L
X
L
Q
0
Address A
0
Read out. Load A
1
.
n+5
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+6
X
X
L
H
L
X
L
Q
1
Address A
1
Read out. Deselected.
n+7
A
2
H
L
L
L
X
X
Z
Address and control meet setup.
n+8
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+9
X
X
L
H
L
X
L
Q
2
Address A
2
Read out. Deselected.
5294 tbl 19
Cycle
Address
R/
W
ADV/
LD
CE
(2)
CEN
BW
x
OE
I/O
(3)
Comments
n
X
X
L
H
L
X
X
Deselected.
n+1
X
X
L
H
L
X
X
Deselected.
n+2
A
0
L
L
L
L
L
X
Z
Address and Control meet setup
n+3
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+4
A
1
L
L
L
L
L
X
D
0
Address D
0
Write in. Load A
1
.
n+5
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+6
X
X
L
H
L
X
X
D
1
Address D
1
Write in. Deselected.
n+7
A
2
L
L
L
L
L
X
Z
Address and control meet setup.
n+8
X
X
L
H
L
X
X
Z
Deselected or STOP.
n+9
X
X
L
H
L
X
X
D
2
Address D
2
Write in. Deselected.
5294 tbl 20
相關(guān)PDF資料
PDF描述
IDT71V2548SA133BGI Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 560pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: X7R; Lead Style: Radial Leaded; Lead Dimensions: 0.200" Lead Spacing; Body Dimensions: 0.300" x 0.390" x 0.200"; Container: Bag; Qty per Container: 250
IDT71V2548SA133BQ 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V2548SA133BQI 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V2548SA133PF 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
IDT71V2548SA133PFI Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 5600pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.200" Lead Spacing; Body Dimensions: 0.300" x 0.390" x 0.200"; Container: Bag; Qty per Container: 250
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