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參數(shù)資料
| 型號(hào)： | IDT71V256SB20PZ |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 6800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.200" Lead Spacing; Body Dimensions: 0.300" x 0.390" x 0.200"; Container: Bag; Qty per Container: 250 |
| 中文描述： | 32K X 8 CACHE TAG SRAM, 20 ns, PDSO28 |
| 封裝： | 0.300 INCH, TSOP1-28 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | IDT71V256SB20PZ |
4
IDT71V256SA
3.3V CMOS STATIC RAM 256K (32K x 8-BIT)
INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 3.3V
±
0.3V)
71V256SA10
(2)
Max.
71V256SA12
(2)
Min.
71V256SA15
Min.
71V256SA20
(2)
Min.
Symbol
Read Cycle
t
RC
t
AA
t
ACS
t
CLZ
(1)
t
CHZ
(1)
t
OE
t
OLZ
(1)
t
OHZ
(1)
t
OH
Write Cycle
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
(1)
t
WHZ
(1)
Parameter
Min.
Max.
Max.
Max.
Unit
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select to Output in Low-Z
Chip Select to Output in High-Z
Output Enable to Output Valid
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
Output Hold from Address Change
10
—
—
5
0
—
3
2
3
—
10
10
—
8
6
—
6
—
12
—
—
5
0
—
3
2
3
—
12
12
—
8
6
—
6
—
15
—
—
5
0
—
0
0
3
—
15
15
—
9
7
—
7
—
20
—
—
5
0
—
0
0
3
—
20
20
—
10
8
—
8
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
Address Valid to End-of-Write
Chip Select to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End-of-Write
Write Enable to Output in High-Z
10
9
9
0
9
0
6
0
4
1
—
—
—
—
—
—
—
—
—
8
12
9
9
0
9
0
6
0
4
1
—
—
—
—
—
—
—
—
—
8
15
10
10
0
10
0
7
0
4
1
—
—
—
—
—
—
—
—
—
9
20
15
15
0
15
0
8
0
4
1
—
—
—
—
—
—
—
—
—
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE:
1. This parameter guaranteed with the AC test load (Figure 2) by device characterization, but is not production tested.
2. Commercial temperature range only.
3101 tbl 10
TIMING WAVEFORM OF READ CYCLE NO. 1
(1)
NOTES:
1.
WE
is HIGH for Read cycle.
2. Transition is measured
±
200mV from steady state.
ADDRESS
CS
DATA
OUT
OE
3101 drw 06
t
RC
t
AA
t
OH
t
ACS
(2)
t
CLZ
t
CHZ(2)
t
OE
t
OLZ
(2)
t
OHZ(2)
DATA VALID
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT71V256SB20Y | 3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT) |
| IDT71V256SA15PZI | LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) |
| IDT71V256SA12YG8 | Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) |
| IDT71V256SA15PZG8 | Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) |
| IDT71V256SA15PZGI8 | Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71V256SL15Y | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT71V25761S166BG | 功能描述:IC SRAM 4MBIT 166MHZ 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71V25761S166BG8 | 功能描述:IC SRAM 4MBIT 166MHZ 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71V25761S166BGI | 功能描述:IC SRAM 4MBIT 166MHZ 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71V25761S166BGI8 | 功能描述:IC SRAM 4MBIT 166MHZ 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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