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參數資料
| 型號： | IDT71V25761S183PF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect |
| 中文描述： | 128K X 36 CACHE SRAM, 3.3 ns, PQFP100 |
| 封裝： | 14 X 20 MM, PLASTIC, TQFP-100 |
| 文件頁數： | 9/23頁 |
| 文件大?。?/td> | 526K |
| 代理商： | IDT71V25761S183PF |
6.42
IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1)
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
DD
= 3.3V ± 5%)
Symbol
Parameter
Figure 2. Lumped Capacitive Load, Typical Derating
Figure 1. AC Test Load
AC Test Load
AC Test Conditions
(V
DDQ
= 2.5V)
NOTE:
1. The
LBO
pin will be internally pulled to V
DD
if it is not actively driven in the application and the ZZ pin will be internally pulled to V
SS
if not actively driven.
NOTES:
1. All values are maximumguaranteed values.
2. At f = f
MAX,
inputs are cycling at the maximumfrequency of read cycles of 1/t
CYC
while
ADSC
= LOW; f=0 means no input lines are changing.
3. For I/Os V
HD
= V
DDQ
- 0.2V, V
LD
= 0.2V. For other inputs V
HD
= V
DD
- 0.2V, V
LD
= 0.2V.
V
DDQ
/2
50
I/O
Z
0
= 50
5297 drw 06
,
1
2
3
4
20 30 50
100
200
5297 drw 07
,
(TyptCD
Capacitance (pF)
80
5
6
Test Conditions
Mn.
Max.
Unit
|
LI
|
Input Leakage Current
V
DD
= Max., V
IN
= 0V to V
DD
___
5
μA
|
LZZ
|
ZZ and
LBO
Input Leakage Current
(1)
V
DD
= Max., V
IN
= 0V to V
DD
___
30
μA
|
LO
|
Output Leakage Current
V
OUT
= 0V to V
DDQ
, Device Deselected
___
5
μA
V
OL
Output LowVoltage
I
OL
= +6mA, V
DD
= Mn.
___
0.4
V
V
OH
Output High Voltage
I
OH
= -6mA, V
DD
= Mn.
2.0
___
V
5297 tbl 08
Symbol
Parameter
Test Conditions
200MHz
183MHz
166MHz
Unit
Com'l Only
Com'l
Ind
Com'l
Ind
I
DD
Operating Power Supply
Current
Device Selected, Outputs Open, V
DD
= Max.,
V
DDQ
= Max., V
IN
> V
IH
or < V
IL
, f = f
MAX
(2)
360
340
350
320
330
mA
I
SB1
CMOS Standby Power
Supply Current
Device Deselected, Outputs Open, V
DD
= Max.,
V
DDQ
= Max., V
IN
> V
HD
or < V
LD
, f = 0
(2,3)
30
30
35
30
35
mA
I
SB2
Clock Running Power
Supply Current
Device Deselected, Outputs Open, V
DD
= Max.,
V
DDQ
= Max., V
IN
> V
HD
or < V
LD
, f = f
MAX
(2,3)
130
120
130
110
120
mA
I
ZZ
Full Sleep Mode Supply
Current
ZZ > V
HD
V
DD
= Max.
30
30
35
30
35
mA
5297 tbl 09
Input Pulse Levels
Input Rise/Fall Times
Input Timng Reference Levels
Output Timng Reference Levels
AC Test Load
0 to 2.5V
2ns
(V
DDQ
/2)
(V
DDQ
/2)
See Figure 1
5297 tbl 10
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PDF描述 |
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| IDT71V25761S183PFI | 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IDT71V25761S183PF8 | 功能描述:IC SRAM 4MBIT 183MHZ 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產品變化通告:Product Discontinuation 05/Nov/2008 標準包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應商設備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI |
| IDT71V25761S183PFG | 功能描述:IC SRAM 4MBIT 183MHZ 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71V25761S183PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 183MHZ 100TQFP |
| IDT71V25761S183PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 183MHZ 100TQFP |
| IDT71V25761S183PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 183MHZ 100TQFP |
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