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| 型號： | IDT71V25761S200BQ |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect |
| 中文描述： | 128K X 36 CACHE SRAM, 3.1 ns, PBGA165 |
| 封裝： | FBGA-165 |
| 文件頁數(shù)： | 10/23頁 |
| 文件大小： | 526K |
| 代理商： | IDT71V25761S200BQ |
6.42
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IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Synchronous Truth Table
(1,3)
NOTES:
1. L = V
IL
, H = V
IH
, X = Dont Care.
2.
OE
is an asynchronous input.
3. ZZ = low for this table.
Operation
Address
Used
CE
CS
0
CS
1
ADSP
ADSC
ADV
GW
BWE
BW
x
OE
(2)
CLK
I/O
Deselected Cycle, Power Down
None
H
X
X
X
L
X
X
X
X
X
-
HI-Z
Deselected Cycle, Power Down
None
L
X
H
L
X
X
X
X
X
X
-
HI-Z
Deselected Cycle, Power Down
None
L
L
X
L
X
X
X
X
X
X
-
HI-Z
Deselected Cycle, Power Down
None
L
X
H
X
L
X
X
X
X
X
-
HI-Z
Deselected Cycle, Power Down
None
L
L
X
X
L
X
X
X
X
X
-
HI-Z
Read Cycle, Begin Burst
External
L
H
L
L
X
X
X
X
X
L
-
D
OUT
Read Cycle, Begin Burst
External
L
H
L
L
X
X
X
X
X
H
-
HI-Z
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
H
X
L
-
D
OUT
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
H
L
-
D
OUT
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
H
H
-
HI-Z
Write Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
L
X
-
D
IN
Write Cycle, Begin Burst
External
L
H
L
H
L
X
L
X
X
X
-
D
IN
Read Cycle, Continue Burst
Next
X
X
X
H
H
L
H
H
X
L
-
D
OUT
Read Cycle, Continue Burst
Next
X
X
X
H
H
L
H
H
X
H
-
HI-Z
Read Cycle, Continue Burst
Next
X
X
X
H
H
L
H
X
H
L
-
D
OUT
Read Cycle, Continue Burst
Next
X
X
X
H
H
L
H
X
H
H
-
HI-Z
Read Cycle, Continue Burst
Next
H
X
X
X
H
L
H
H
X
L
-
D
OUT
Read Cycle, Continue Burst
Next
H
X
X
X
H
L
H
H
X
H
-
HI-Z
Read Cycle, Continue Burst
Next
H
X
X
X
H
L
H
X
H
L
-
D
OUT
Read Cycle, Continue Burst
Next
H
X
X
X
H
L
H
X
H
H
-
HI-Z
Write Cycle, Continue Burst
Next
X
X
X
H
H
L
H
L
L
X
-
D
IN
Write Cycle, Continue Burst
Next
X
X
X
H
H
L
L
X
X
X
-
D
IN
Write Cycle, Continue Burst
Next
H
X
X
X
H
L
H
L
L
X
-
D
IN
Write Cycle, Continue Burst
Next
H
X
X
X
H
L
L
X
X
X
-
D
IN
Read Cycle, Suspend Burst
Current
X
X
X
H
H
H
H
H
X
L
-
D
OUT
Read Cycle, Suspend Burst
Current
X
X
X
H
H
H
H
H
X
H
-
HI-Z
Read Cycle, Suspend Burst
Current
X
X
X
H
H
H
H
X
H
L
-
D
OUT
Read Cycle, Suspend Burst
Current
X
X
X
H
H
H
H
X
H
H
-
HI-Z
Read Cycle, Suspend Burst
Current
H
X
X
X
H
H
H
H
X
L
-
D
OUT
Read Cycle, Suspend Burst
Current
H
X
X
X
H
H
H
H
X
H
-
HI-Z
Read Cycle, Suspend Burst
Current
H
X
X
X
H
H
H
X
H
L
-
D
OUT
Read Cycle, Suspend Burst
Current
H
X
X
X
H
H
H
X
H
H
-
HI-Z
Write Cycle, Suspend Burst
Current
X
X
X
H
H
H
H
L
L
X
-
D
IN
Write Cycle, Suspend Burst
Current
X
X
X
H
H
H
L
X
X
X
-
D
IN
Write Cycle, Suspend Burst
Current
H
X
X
X
H
H
H
L
L
X
-
D
IN
Write Cycle, Suspend Burst
Current
H
X
X
X
H
H
L
X
X
X
-
D
IN
5297 tbl 11
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| IDT71V25761S200PF | 功能描述:IC SRAM 4MBIT 200MHZ 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標準包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI |
| IDT71V25761S200PF8 | 功能描述:IC SRAM 4MBIT 200MHZ 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標準包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI |
| IDT71V25761S200PFG | 功能描述:IC SRAM 4MBIT 200MHZ 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71V25761S200PFG8 | 功能描述:IC SRAM 4MBIT 200MHZ 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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