參數(shù)資料
型號(hào): IDT71V2578S133BGI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
中文描述: 256K X 18 CACHE SRAM, 4.2 ns, PBGA119
封裝: BGA-119
文件頁數(shù): 12/22頁
文件大小: 282K
代理商: IDT71V2578S133BGI
6.42
12
IDT71V2576, IDT71V2578, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(V
DD
= 3.3V ±5%, Commercial and Industrial Temperature Ranges)
NOTES:
1. Measured as HIGH above V
IH
and LOW below V
IL
.
2. Transition is measured ±200mV fromsteady-state.
3. Device must be deselected when powered-up fromsleep mode.
4. t
CFG
is the mnimumtime required to configure the device based on the
LBO
input.
LBO
is a static input and must not change during normal operation.
150MHz
133MHz
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
t
CYC
Clock Cycle Time
6.7
____
7.5
____
ns
t
CH
(1)
Clock High Pulse Width
2.6
____
3
____
ns
t
CL
(1)
Clock LowPulse Width
2.6
____
3
____
ns
Output Parameters
t
CD
Clock High to Valid Data
____
3.8
____
4.2
ns
t
CDC
Clock High to Data Change
1.5
____
1.5
____
ns
t
CLZ
(2)
Clock High to Output Active
0
____
0
____
ns
t
CHZ
(2)
Clock High to Data High-Z
1.5
3.8
1.5
4.2
ns
t
OE
Output Enable Access Time
____
3.8
____
4.2
ns
t
OLZ
(2)
Output Enable Lowto Output Active
0
____
0
____
ns
t
OHZ
(2)
Output Enable High to Output High-Z
____
3.8
____
4.2
ns
Set Up Times
t
SA
Address Setup Time
1.5
____
1.5
____
ns
t
SS
Address Status Setup Time
1.5
____
1.5
____
ns
t
SD
Data In Setup Time
1.5
____
1.5
____
ns
t
SW
Write Setup Time
1.5
____
1.5
____
ns
t
SAV
Address Advance Setup Time
1.5
____
1.5
____
ns
t
SC
Chip Enable/Select Setup Time
1.5
____
1.5
____
ns
Hold Times
t
HA
Address Hold Time
0.5
____
0.5
____
ns
t
HS
Address Status Hold Time
0.5
____
0.5
____
ns
t
HD
Data In Hold Time
0.5
____
0.5
____
ns
t
HW
Write Hold Time
0.5
____
0.5
____
ns
t
HAV
Address Advance Hold Time
0.5
____
0.5
____
ns
t
HC
Chip Enable/Select Hold Time
0.5
____
0.5
____
ns
Sleep Mode and Configuration Parameters
t
ZZPW
ZZ Pulse Width
100
____
100
____
ns
t
ZZR
(3)
ZZ Recovery Time
100
____
100
____
ns
t
CFG
(4)
Configuration Set-up Time
27
____
30
____
ns
4876 tbl 16
相關(guān)PDF資料
PDF描述
IDT71V2578S133BQ 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
IDT71V2578S133BQI 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
IDT71V2578S133PF 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
IDT71V2578YSA133BGI 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
IDT71V2578YSA133BQ 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT71V30L25TF 功能描述:IC SRAM 8KBIT 25NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT71V30L25TF8 功能描述:IC SRAM 8KBIT 25NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
IDT71V30L25TFG 功能描述:IC SRAM 8KBIT 25NS 64TQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT71V30L25TFG8 功能描述:IC SRAM 8KBIT 25NS 64TQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
IDT71V30L35TF 功能描述:IC SRAM 8KBIT 35NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI