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參數(shù)資料
| 型號： | IDT71V3559SA75BQI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 82pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.200" Lead Spacing; Body Dimensions: 0.300" x 0.390" x 0.200"; Container: Bag; Qty per Container: 250 |
| 中文描述： | 128K的× 36，256 × 18，3.3V的同步ZBT SRAM的3.3V的I / O的脈沖計數(shù)器，流量，通過輸出 |
| 文件頁數(shù)： | 12/28頁 |
| 文件大小： | 996K |
| 代理商： | IDT71V3559SA75BQI |
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6.42
12
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs Commercial and Industrial Temperature Ranges
Read Operation
(1)
CEN
BW
x
Burst Write Operation
(1)
Burst Read Operation
(1)
Write Operation
(1)
NOTES:
1. H = High; L = Low; X = Dont Care; Z = High Impedance.
2.
CE
2
timng transition is identical to
CE
1
signal. CE
2
timng transition is identical but inverted to the
CE
1
and
CE
2
signals.
NOTES:
1. H = High; L = Low; X = Dont Care; Z = High Impedance.
2.
CE
2
timng transition is identical to
CE
1
signal. CE
2
timng transition is identical but inverted to the
CE
1
and
CE
2
signals.
NOTES:
1. H = High; L = Low; X = Dont Care; Z = High Impedance.
2.
CE
2
timng transition is identical to
CE
1
signal. CE
2
timng transition is identical but inverted to the
CE
1
and
CE
2
signals.
NOTES:
1. H = High; L = Low; X = Dont Care; Z = High Impedance.
2.
CE
2
timng transition is identical to
CE
1
signal. CE
2
timng transition is identical but inverted to the
CE
1
and
CE
2
signals.
Cycle
Address
R/
W
ADV/
LD
CE
1
(2)
OE
I/O
Comments
n
A
0
H
L
L
L
X
X
X
Address and Control meet setup
n+1
X
X
X
X
X
X
L
Q
0
Contents of Address A
0
Read Out
5282 tbl 13
Cycle
Address
R/
W
ADV/
LD
CE
1
(2)
CEN
BW
x
OE
I/O
Comments
n
A
0
H
L
L
L
X
X
X
Address and Control meet setup
n+1
X
X
H
X
L
X
L
Q
0
Address A
0
Read Out, Inc. Count
n+2
X
X
H
X
L
X
L
Q
0+1
Address A
0+1
Read Out, Inc. Count
n+3
X
X
H
X
L
X
L
Q
0+2
Address A
0+2
Read Out, Inc. Count
n+4
X
X
H
X
L
X
L
Q
0+3
Address A
0+3
Read Out, Load A
1
n+5
A
1
H
L
L
L
X
L
Q
0
Address A
0
Read Out, Inc. Count
n+6
X
X
H
X
L
X
L
Q
1
Address A
1
Read Out, Inc. Count
n+7
A
2
H
L
L
L
X
L
Q
1+1
Address A
1+1
Read Out, Load A
2
5282 tbl 14
Cycle
Address
R/
W
ADV/
LD
CE
1
(2)
CEN
BW
x
OE
I/O
Comments
n
A
0
L
L
L
L
L
X
X
Address and Control meet setup
n+1
X
X
X
X
L
X
X
D
0
Write to Address A
0
5282 tbl 15
Cycle
Address
R/
W
ADV/
LD
CE
1
(2)
CEN
BW
x
OE
I/O
Comments
n
A
0
L
L
L
L
L
X
X
Address and Control meet setup
n+1
X
X
H
X
L
L
X
D
0
Address A
0
Write, Inc. Count
n+2
X
X
H
X
L
L
X
D
0+1
Address A
0+1
Write, Inc. Count
n+3
X
X
H
X
L
L
X
D
0+2
Address A
0+2
Write, Inc. Count
n+4
X
X
H
X
L
L
X
D
0+3
Address A
0+3
Write, Load A
1
n+5
A
1
L
L
L
L
L
X
D
0
Address A
0
Write, Inc. Count
n+6
X
X
H
X
L
L
X
D
1
Address A
1
Write, Inc. Count
n+7
A
2
L
L
L
L
L
X
D
1+1
Address A
1+1
Write, Load A
2
5282 tbl 16
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| IDT71V3559SA75PF | 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs |
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| IDT71V3559SA80BGI | 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs |
| IDT71V3559SA80BQ | 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71V3559SA75BQI8 | 功能描述:IC SRAM 4MBIT 75NS 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| IDT71V3559SA80BG | 功能描述:IC SRAM 4MBIT 80NS 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| IDT71V3559SA80BG8 | 功能描述:IC SRAM 4MBIT 80NS 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| IDT71V3559SA80BQ | 功能描述:IC SRAM 4MBIT 80NS 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
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