參數資料
型號: IDT71V416VS15YGI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
中文描述: 256K X 16 STANDARD SRAM, 15 ns, PDSO44
封裝: 0.400 INCH, PLASTIC, SOJ-44
文件頁數: 3/9頁
文件大?。?/td> 95K
代理商: IDT71V416VS15YGI
6.42
IDT71V416VS, IDT71V416VL 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings
(1)
3
Recommended Operating
Temperature and Supply
Voltage
Recommended DC Operating
Conditions
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
NOTES:
1. VIH (max) = VDD + 1.0V a.c. (pulse width less than t
CYC
/2) for I < 20 mA, once
per cycle.
2. VIL (mn) = –1.0V a.c. (pulse width less than t
CYC
/2) for I < 20 mA, once per cycle.
Truth Table
(1)
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't care.
Symbol
Rating
Value
Unit
V
DD
Supply Voltage Relative to
V
SS
Termnal Voltage Relative to
V
SS
-0.5 to +4.6
V
V
IN,
V
OUT
-0.5 to V
DD
+0.5
V
T
BIAS
Temperature Under Bias
-55 to +125
o
C
T
STG
Storage Temperature
-55 to +125
o
C
P
T
Power Dissipation
1
W
I
OUT
DC Output Current
50
mA
6478 tbl 04
Grade
Temperature
V
SS
V
DD
Commercial
0
O
C to +70
O
C
0V
See Below
Industrial
–40
O
C to +85
O
C
0V
See Below
6478 tbl 05
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
DD
Supply Voltage
3.0
3.3
3.6
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
2.0
____
V
DD
+0.3
(1)
V
V
IL
Input Low Voltage
-0.3
(2)
____
0.8
V
6478 tbl 06
CS
OE
WE
BLE
BHE
I/O
0-
I/O
7
I/O
8-
I/O
15
Function
H
X
X
X
X
High-Z
High-Z
Deselected - Standby
L
L
H
L
H
DATA
OUT
High-Z
LowByte Read
L
L
H
H
L
High-Z
DATA
OUT
High Byte Read
L
L
H
L
L
DATA
OUT
DATA
OUT
Word Read
L
X
L
L
L
DATA
IN
DATA
IN
Word Write
L
X
L
L
H
DATA
IN
High-Z
LowByte Write
L
X
L
H
L
High-Z
DATA
IN
High Byte Write
L
H
H
X
X
High-Z
High-Z
Outputs Disabled
L
X
X
H
H
High-Z
High-Z
Outputs Disabled
6478 tbl 03
相關PDF資料
PDF描述
IDT71V416VL15YGI 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
IDT71V416YS12PHG 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
IDT71V416VS12PHGI 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
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IDT71V416YL10BE 功能描述:IC SRAM 4MBIT 10NS 48BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M(256K x 18) 速度:133MHz 接口:并聯 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP(14x20) 包裝:托盤
IDT71V416YL10BE8 功能描述:IC SRAM 4MBIT 10NS 48BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M(256K x 18) 速度:133MHz 接口:并聯 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP(14x20) 包裝:托盤
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