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| 型號： | IDT71V67902S75BGI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect |
| 中文描述： | 512K X 18 CACHE SRAM, 7.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, PLASTIC, BGA-119 |
| 文件頁數(shù)： | 4/23頁 |
| 文件大小： | 527K |
| 代理商： | IDT71V67902S75BGI |
6.42
IDT71V67702, IDT71V67902, 256K x 36, 512K x 18, 3.3V Synchronous Commercial and Industrial Temperature Ranges
SRAMs with 2.5V I/O, Flow-Through Outputs, Single Cycle Deselect
100-Pin TQFP Capacitance
(T
A
= +25° C, f = 1.0MHz)
Recommended Operating
Temperature Supply Voltage
Absolute Maximum Ratings
(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
2. V
DD
termnals only.
3. V
DDQ
termnals only.
4. Input termnals only.
5. I/O termnals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed V
DDQ
during power supply ramp up.
7. T
A
is the "instant on" case temperature.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Symbol
Rating
Commercial
Unit
V
TERM
(2)
Termnal Voltage wth
Respect to GND
-0.5 to +4.6
V
V
TERM
(3,6)
Termnal Voltage wth
Respect to GND
-0.5 to V
DD
V
V
TERM
(4,6)
Termnal Voltage wth
Respect to GND
-0.5 to V
DD
+0.5
V
V
TERM
(5,6)
Termnal Voltage wth
Respect to GND
-0.5 to V
DDQ
+0.5
V
T
A
(7)
Commercial
-0 to +70
o
C
Industrial
-40 to +85
o
C
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-55 to +125
o
C
P
T
Power Dissipation
2.0
W
I
OUT
DC Output Current
50
mA
5317 tbl 03
Grade
Temperature
(1)
V
SS
V
DD
V
DDQ
Commercial
0°C to +70°C
0V
3.3V±5%
2.5V±5%
Industrial
-40°C to +85°C
0V
3.3V±5%
2.5V±5%
5317 tbl 04
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
5
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
7
pF
5317
tbl 07
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
DD
Core Supply Voltage
3.135
3.3
3.465
V
V
DDQ
I/O Supply Voltage
2.375
2.5
2.625
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage - Inputs
1.7
____
V
DD
+0.3
V
V
IH
Input High Voltage - I/O
1.7
____
V
DDQ
+0.3
V
V
IL
Input LowVoltage
-0.3
(1)
____
0.7
V
5317 tbl 06
Recommended DC Operating
Conditions
NOTE:
1. V
IL
(mn) = -1.0V for pulse width less than t
CYC/2
, once per cycle.
NOTE:
1. T
A
is the "instant on" case temperature.
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
7
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
7
pF
5317
tbl 07a
119 BGA Capacitance
(T
A
= +25° C, f = 1.0MHz)
165 fBGA Capacitance
(T
A
= +25° C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
7
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
7
pF
5317
tbl 07b
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| IDT71V67903S75BG | 功能描述:IC SRAM 9MBIT 75NS 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT71V67903S75BG8 | 功能描述:IC SRAM 9MBIT 75NS 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT71V67903S75BQ | 功能描述:IC SRAM 9MBIT 75NS 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT71V67903S75BQ8 | 功能描述:IC SRAM 9MBIT 75NS 165FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT71V67903S75BQG | 功能描述:IC SRAM 9MBIT 75NS 165FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
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