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參數(shù)資料
| 型號： | IDT7201LA25XE |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
| 中文描述： | 512 X 9 OTHER FIFO, 25 ns, CDFP28 |
| 封裝： | CERPACK-28 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 152K |
| 代理商： | IDT7201LA25XE |
5.03
3
IDT7200/7201A/7202A CMOS ASYNCHRONOUS FIFO
256 x 9, 512 x 9 and 1K x 9
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(Commercial: V
CC
= 5.0V
±
10%, T
A
= 0
°
C to +70
°
C; Military: V
CC
= 5.0V
±
10%, T
A
= –55
°
C to +125
°
C)
IDT7200L
IDT7201LA
IDT7202LA
Commercial
t
A
= 12, 15, 20 ns
Min.
Typ.
–1
—
–10
—
2.4
—
—
—
—
—
—
—
—
—
IDT7200L
IDT7201LA
IDT7202LA
Military
t
A
= 20 ns
Min.
Typ.
–10
–10
2.4
—
—
—
—
IDT7200L
IDT7201LA
IDT7202LA
Commercial
t
A
= 25, 35 ns
Min.
Typ. Max.
–1
—
–10
—
2.4
—
—
—
—
—
—
—
—
—
Symbol
I
LI(1)
I
LO(2)
V
OH
V
OL
I
CC1(3)
I
CC2(3)
I
CC3
(L)
(3)
Parameter
Max.
1
10
—
0.4
125
(4)
15
0.5
Max.
10
10
—
0.4
140
(4)
20
0.9
Unit
μ
A
μ
A
V
V
mA
mA
mA
Input Leakage Current (Any Input)
Output Leakage Current
Output Logic “1” Voltage I
OH
= –2mA
Output Logic “0” Voltage I
OL
= 8mA
Active Power Supply Current
Standby Current (
R
=
W
=
RS
=
FL
/
RT
=V
IH
)
Power Down Current (All Input = V
CC
- 0.2V)
—
—
—
—
—
—
—
1
10
—
0.4
125
(4)
15
0.5
DC ELECTRICAL CHARACTERISTICS (Continued)
(Commercial: V
CC
= 5.0V
±
10%, T
A
= 0
°
C to +70
°
C; Military: V
CC
= 5.0V
±
10%, T
A
= –55
°
C to +125
°
C)
IDT7200L
IDT7201LA
IDT7202LA
Military
t
A
= 30, 40 ns
Min.
Typ.
–10
–10
2.4
—
—
—
—
IDT7200L
IDT7201LA
IDT7202LA
Commercial
t
A
= 50 ns
Min.
Typ. Max.
–1
—
–10
—
2.4
—
—
—
—
50
—
5
—
—
IDT7200L
IDT7201LA
IDT7202LA
Military
t
A
= 50, 65, 80, 120 ns
Min.
Typ.
–10
—
–10
—
2.4
—
—
—
—
70
—
8
—
—
Symbol
I
LI(1)
I
LO(2)
V
OH
V
OL
I
CC1(3)
I
CC2(3)
I
CC3
(L)
(3)
Parameter
Max.
10
10
—
0.4
140
(4)
20
0.9
Max. Unit
10
10
—
0.4
100
15
0.9
Input Leakage Current (Any Input)
Output Leakage Current
Output Logic “1” Voltage I
OH
= –2mA
Output Logic “0” Voltage I
OL
= 8mA
Active Power Supply Current
Standby Current (
R
=
W
=
RS
=
FL
/
RT
=V
IH
)
Power Down Current (All Input = V
CC
- 0.2V)
—
—
—
—
—
—
—
1
μ
A
μ
A
V
V
mA
mA
mA
10
—
0.4
80
8
0.5
2679 tbl 04
2679 tbl 05
NOTES:
1. Measurements with 0.4
≤
V
IN
≤
V
CC
.
2.
R
≥
V
IH
, 0.4
≤
V
OUT
≤
V
CC
.
3. I
CC
measurements are made with outputs open (only capacitive loading).
4. Tested at f = 20MHz.
2679 tbl 05
NOTES:
1. Measurements with 0.4
≤
V
IN
≤
V
CC
.
2.
R
≥
V
IH
, 0.4
≤
V
OUT
≤
V
CC
.
3. I
CC
measurements are made with outputs open (only capacitive loading).
4. Tested at f = 20MHz.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IDT7201LA30DB | 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 512X9 ASYNC 28CDIP |
| IDT7201LA30LB | 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 512X9 ASYNC 32LCC |
| IDT7201LA30LB8 | 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 512X9 ASYNC 32LCC |
| IDT7201LA30TDB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 512X9 ASYNC 28CDIP |
| IDT7201LA30XEB | 制造商:IDT 功能描述:IC SOCKETED |
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