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參數(shù)資料
| 型號(hào)： | IDT7201LA35P |
| 廠商： | IDT, Integrated Device Technology Inc |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MEM FIFO 512X9 35NS 28-PDIP |
| 標(biāo)準(zhǔn)包裝： | 13 |
| 系列： | 7200 |
| 功能： | 異步 |
| 存儲(chǔ)容量： | 4.6K（512 x 9） |
| 數(shù)據(jù)速率： | 22.2MHz |
| 訪問時(shí)間： | 35ns |
| 電源電壓： | 4.5 V ~ 5.5 V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 通孔 |
| 封裝/外殼： | 28-DIP（0.600"，15.24mm） |
| 供應(yīng)商設(shè)備封裝： | 28-PDIP |
| 包裝： | 管件 |
| 其它名稱： | 7201LA35P |
10
COMMERCIAL,INDUSTRIALANDMILITARY
TEMPERATURERANGES
IDT7201L/7201LA/7202LA CMOS ASYNCHRONOUS FIFO
256 x 9, 512 x 9 and 1,024 x 9
USAGE MODES:
WIDTH EXPANSION
Word width may be increased simply by connecting the corresponding
inputcontrolsignalsofmultipledevices. Statusflags(EF,FFandHF)canbe
detectedfromanyonedevice. Figure13demonstratesan18-bitwordwidth
by using two IDT7200/7201A/7202As. Any word width can be attained by
adding additional IDT7200/7201A/7202As (Figure 13).
BIDIRECTIONAL OPERATION
Applications which require data buffering between two systems (each
system capable of Read and Write operations) can be achieved by pairing
IDT7200/7201A/7202As as shown in Figure 16. Both Depth Expansion and
Width Expansion may be used in this mode.
DATA FLOW-THROUGH
Two types of flow-through modes are permitted, a read flow-through
and write flow-through mode. For the read flow-through mode (Figure 17),
theFIFOpermitsareadingofasinglewordafterwritingonewordofdatainto
anemptyFIFO. Thedataisenabledonthebusin(tWEF+tA)nsaftertherising
edgeofW,calledthefirstwriteedge,anditremainsonthebusuntiltheRline
is raised from LOW-to-HIGH, after which the bus would go into a three-state
mode after tRHZ ns. The EF line would have a pulse showing temporary
deassertion and then would be asserted.
In the write flow-through mode (Figure 18), the FIFO permits the writing
of a single word of data immediately after reading one word of data from a
fullFIFO. TheRlinecausestheFFtobedeassertedbuttheWlinebeingLOW
causesittobeassertedagaininanticipationofanewdataword. Ontherising
edge of W, the new word is loaded in the FIFO. The W line must be toggled
whenFFisnotassertedtowritenewdataintheFIFOandtoincrementthewrite
pointer.
COMPOUND EXPANSION
The two expansion techniques described above can be applied together
in a straightforward manner to achieve large FIFO arrays (see Figure 15).
Figure 13. Block Diagram of 256 x 18, 512 x 18, 1,024 x 18 FIFO Memory Used in Width Expansion Mode
Figure 12. Block Diagram of Single 256 x 9, 512 x 9, 1,024 x 9 FIFO
WRITE (
W)
DATA IN (D)
FULL FLAG (
FF)
RESET (
RS)
9
READ (
R)
9
DATA OUT (Q)
EMPTY FLAG (
EF)
RETRANSMIT (
RT)
EXPANSION IN (
XI)
(
HF)
IDT
7200/
7201A/
7202A
(HALF-FULL FLAG)
2679 drw 14
IDT
7200/
7201A/
7202A
XI
99
18
9
18
HF
9
DATA
WRITE (
W)
FULL FLAG (
FF)
RESET (
RS)
(D)
IN
READ (
R)
EMPTY FLAG (
EF)
RETRANSMIT (
RT)
DATA OUT (Q)
IDT
7200/
7201A/
7202A
2679 drw 15
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IDT7201LA35SO | 功能描述:IC MEM FIFO 512X9 35NS 28-SOIC RoHS:否 類別:集成電路 (IC) >> 邏輯 - FIFO 系列:7200 標(biāo)準(zhǔn)包裝:80 系列:7200 功能:同步 存儲(chǔ)容量:18.4K（1K x 18） 數(shù)據(jù)速率:- 訪問時(shí)間:10ns 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:64-LQFP 供應(yīng)商設(shè)備封裝:64-TQFP（10x10） 包裝:托盤 其它名稱:72225LB10TF |
| IDT7201LA35SO8 | 功能描述:IC MEM FIFO 512X9 35NS 28-SOIC RoHS:否 類別:集成電路 (IC) >> 邏輯 - FIFO 系列:7200 標(biāo)準(zhǔn)包裝:80 系列:7200 功能:同步 存儲(chǔ)容量:18.4K（1K x 18） 數(shù)據(jù)速率:- 訪問時(shí)間:10ns 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:64-LQFP 供應(yīng)商設(shè)備封裝:64-TQFP（10x10） 包裝:托盤 其它名稱:72225LB10TF |
| IDT7201LA35TP | 功能描述:IC MEM FIFO 512X9 35NS 28-PDIP RoHS:否 類別:集成電路 (IC) >> 邏輯 - FIFO 系列:7200 標(biāo)準(zhǔn)包裝:80 系列:7200 功能:同步 存儲(chǔ)容量:18.4K（1K x 18） 數(shù)據(jù)速率:- 訪問時(shí)間:10ns 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:64-LQFP 供應(yīng)商設(shè)備封裝:64-TQFP（10x10） 包裝:托盤 其它名稱:72225LB10TF |
| IDT7201LA35TPG | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT7201LA50DB | 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 512X9 28CDIP |
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