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| 型號： | IDT7201LA80DB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
| 中文描述： | 512 X 9 OTHER FIFO, 80 ns, CDIP28 |
| 封裝： | 0.600 INCH, CERAMIC, DIP-28 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大小： | 152K |
| 代理商： | IDT7201LA80DB |
5.03
2
IDT7200/7201A/7202A CMOS ASYNCHRONOUS FIFO
256 x 9, 512 x 9 and 1K x 9
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
V
CCM
Military Supply
Voltage
V
CCC
Commercial Supply
Voltage
GND
Supply Voltage
V
IH(1)
Input High Voltage
Commercial
V
IH(1)
Input High Voltage
Mlitary
V
IL(2)
Input Low Voltage
Commercial and
Military
NOTE:
1. V
IH
= 2.6V for
XI
input (commercial).
V
IH
= 2.8V for
XI
input (military).
2. 1.5V undershoots are allowed for 10ns once per cycle.
2679 tbl 03
Min.
4.5
Typ.
5.0
Max.
5.5
Unit
V
4.5
5.0
5.5
V
0
0
0
V
2.0
—
—
V
2.2
—
—
V
—
—
0.8
V
W
D
8
D
3
D
2
D
1
D
0
XI
FF
Q
0
Q
1
Q
2
Q
3
Q
8
V
CC
D
4
D
5
D
6
D
7
FL
/
RT
RS
EF
XO
/
HF
Q
7
Q
6
Q
5
Q
4
R
P28-1,
P28-2,
D28-1,
D28-3,
E28-2,
SO28-3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
GND
2679 drw 02a
D
2
D
1
D
0
XI
5
6
7
8
9
10
11
12
13
FF
Q
0
Q
1
NC
Q
2
D
6
D
7
NC
FL
/
RT
RS
EF
XO
/
HF
Q
7
Q
6
29
28
27
26
25
24
23
22
21
4
3
2
132 31 30
14 15 16 17 18 19 20
Q
3
Q
8
G
N
R
Q
4
Q
5
D
3
D
8
W
N
V
C
D
4
D
5
INDEX
J32-1
&
L32-1
2679 drw 02b
DIP/SOIC/CERPACK
TOP VIEW
LCC/PLCC
TOP VIEW
NOTE:
1. CERPACK (E28-2) and 600-mil-wide DIP (P28-1 and D28-1) not available
for 7200.
NOTE:
1. LCC (L32-1) not available for 7200.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
Rating
Com’l.
–0.5 to +7.0 –0.5 to +7.0
Mil.
Unit
V
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
T
A
0 to +70
–55 to +125
°
C
T
BIAS
–55 to +125 –65 to +135
°
C
T
STG
–55 to +125 –65 to +155
°
C
I
OUT
50
50
mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliabilty.
2679 tbl 01
CAPACITANCE
(T
A
= +25
°
C, f = 1.0 MHz)
Parameter
(1)
C
IN
Input Capacitance
C
OUT
Output Capacitance
Symbol
Condition
V
IN
= 0V
V
OUT
= 0V
Max.
8
8
Unit
pF
pF
NOTE:
1. This parameter is sampled and not 100% tested.
2679 tbl 02
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PDF描述 |
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| IDT7200LA80LB | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
| IDT7201LA80LB | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
| IDT7200LA80J | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
| IDT7200LA80L | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7201LA80J | 制造商:Integrated Device Technology Inc 功能描述:FIFO, 512 x 9, Asynchronous, 32 Pin, Plastic, PLCC |
| IDT7201LA80TDB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 512X9 ASYNC 28CDIP 制造商:Integrated Device Technology Inc 功能描述:FIFO, 512 x 9, Asynchronous, 28 Pin, Ceramic, DIP |
| IDT7201S120CB | 制造商:Integrated Device Technology Inc 功能描述:FIFO, 512 x 9, Asynchronous, 28 Pin, Ceramic, DIP |
| IDT7201S120D | 制造商:Integrated Device Technology Inc 功能描述:FIFO, 512 x 9, Asynchronous, 28 Pin, Ceramic, DIP |
| Idt7201S120DB | 制造商:Integrated Device Technology Inc 功能描述:FIFO, 512 x 9, Asynchronous, 28 Pin, Ceramic, DIP |
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