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參數(shù)資料
| 型號(hào)： | IDT7202LA30J |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
| 中文描述： | CMOS異步FIFO的256 × 9，512 × 9，每1000 × 9 |
| 文件頁(yè)數(shù)： | 3/14頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | IDT7202LA30J |
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5.09
3
MILITARY AND COMMERCIAL TEMPERATURE RANGES
IDT72021, IDT72031, IDT72041
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9
RECOMMENDED DC
OPERATING CONDITIONS
Symbol
V
CCM
Parameter
Military Supply
Voltage
Commercial
Supply Voltage
Supply Voltage
Input High Voltage
Commercial
Input High Voltage
Military
Input Low Voltage
Commercial and
Military
Min.
4.5
Typ.
5.0
Max.
5.5
Unit
V
V
CCC
4.5
5.0
5.5
V
GND
V
IH
0
0
—
0
—
V
V
2.0
V
IH
2.2
—
—
V
V
IL(1)
—
—
0.8
V
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
2677 tbl 05
STATUS FLAG
Number of Words in FIFO
1K
0
1-127
1-255
128-512
256-1024
513-896
1025-1792
897-1023
1793-2047
1024
2K
0
4K
0
1-511
512-2048
2049-3584
3585-4095
4096
FF
H
H
H
H
H
L
AEF
L
L
H
H
L
L
HF
H
H
H
L
L
L
EF
L
H
H
H
H
H
2048
CAPACITANCE
(T
A
= +25
°
C, f = 1.0 MHz)
Symbol
Parameter
(1)
C
IN
Input Capacitance
C
OUT
Output Capacitance
Condition
V
IN
= 0V
V
OUT
= 0V
Max.
10
10
Unit
pF
pF
NOTE:
1. These parameters are sampled and not 100% tested.
2677 tbl 03
2677 tbl l 02
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
Rating
Com’l.
–0.5 to +7.0 –0.5 to +7.0
Mil.
Unit
V
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
T
A
0 to +70
–55 to +125
°
C
T
BIAS
–55 to +125 –65 to +135
°
C
T
STG
–55 to +125 –65 to +155
°
C
I
OUT
50
50
mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliabilty.
2677 tbl 04
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7202LA30L | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
| IDT7202LA30P | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
| IDT7202LA35D | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
| IDT7202LA35DB | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
| IDT7202LA35J | CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7202LA30LB | 制造商:Integrated Device Technology Inc 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 1024X9 ASYNC 32LCC |
| IDT7202LA30LB8 | 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 1024X9 ASYNC 32LCC |
| IDT7202LA30TDB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 1024X9 ASYNC 28CDIP |
| IDT7202LA35J | 功能描述:IC FIFO ASYNCH 1KX9 35NS 32PLCC RoHS:否 類別:集成電路 (IC) >> 邏輯 - FIFO 系列:7200 標(biāo)準(zhǔn)包裝:80 系列:7200 功能:同步 存儲(chǔ)容量:18.4K（1K x 18） 數(shù)據(jù)速率:- 訪問(wèn)時(shí)間:10ns 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:64-LQFP 供應(yīng)商設(shè)備封裝:64-TQFP（10x10） 包裝:托盤 其它名稱:72225LB10TF |
| IDT7202LA35J8 | 功能描述:IC FIFO ASYNCH 1KX9 35NS 32PLCC RoHS:否 類別:集成電路 (IC) >> 邏輯 - FIFO 系列:7200 標(biāo)準(zhǔn)包裝:80 系列:7200 功能:同步 存儲(chǔ)容量:18.4K（1K x 18） 數(shù)據(jù)速率:- 訪問(wèn)時(shí)間:10ns 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:64-LQFP 供應(yīng)商設(shè)備封裝:64-TQFP（10x10） 包裝:托盤 其它名稱:72225LB10TF |
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