參數(shù)資料
型號: IDT7202LA80TDB
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9
中文描述: 1K X 9 OTHER FIFO, 80 ns, CDIP28
封裝: THIN, CERDIP-28
文件頁數(shù): 3/14頁
文件大?。?/td> 153K
代理商: IDT7202LA80TDB
5.09
3
MILITARY AND COMMERCIAL TEMPERATURE RANGES
IDT72021, IDT72031, IDT72041
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9
RECOMMENDED DC
OPERATING CONDITIONS
Symbol
V
CCM
Parameter
Military Supply
Voltage
Commercial
Supply Voltage
Supply Voltage
Input High Voltage
Commercial
Input High Voltage
Military
Input Low Voltage
Commercial and
Military
Min.
4.5
Typ.
5.0
Max.
5.5
Unit
V
V
CCC
4.5
5.0
5.5
V
GND
V
IH
0
0
0
V
V
2.0
V
IH
2.2
V
V
IL(1)
0.8
V
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
2677 tbl 05
STATUS FLAG
Number of Words in FIFO
1K
0
1-127
1-255
128-512
256-1024
513-896
1025-1792
897-1023
1793-2047
1024
2K
0
4K
0
1-511
512-2048
2049-3584
3585-4095
4096
FF
H
H
H
H
H
L
AEF
L
L
H
H
L
L
HF
H
H
H
L
L
L
EF
L
H
H
H
H
H
2048
CAPACITANCE
(T
A
= +25
°
C, f = 1.0 MHz)
Symbol
Parameter
(1)
C
IN
Input Capacitance
C
OUT
Output Capacitance
Condition
V
IN
= 0V
V
OUT
= 0V
Max.
10
10
Unit
pF
pF
NOTE:
1. These parameters are sampled and not 100% tested.
2677 tbl 03
2677 tbl l 02
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
Rating
Com’l.
–0.5 to +7.0 –0.5 to +7.0
Mil.
Unit
V
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
T
A
0 to +70
–55 to +125
°
C
T
BIAS
–55 to +125 –65 to +135
°
C
T
STG
–55 to +125 –65 to +155
°
C
I
OUT
50
50
mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliabilty.
2677 tbl 04
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