參數(shù)資料
型號(hào): IDT7208L35J8
廠商: IDT, Integrated Device Technology Inc
文件頁(yè)數(shù): 9/14頁(yè)
文件大小: 0K
描述: IC FIFO 64KX9 35NS 32PLCC
標(biāo)準(zhǔn)包裝: 750
系列: 7200
功能: 異步
存儲(chǔ)容量: 576K(64K x 9)
數(shù)據(jù)速率: 22.22MHz
訪問(wèn)時(shí)間: 35ns
電源電壓: 4.5 V ~ 5.5 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 32-LCC(J 形引線)
供應(yīng)商設(shè)備封裝: 32-PLCC(13.97x11.43)
包裝: 帶卷 (TR)
其它名稱: 7208L35J8
4
COMMERCIAL,INDUSTRIALANDMILITARY
TEMPERATURERANGES
IDT7203/7204/7205/7206/7207/7208 CMOS ASYNCHRONOUS FIFO
2,048 x 9, 4,096 x 9, 8,192 x 9, 16,384 x 9, 32,768 x 9 and 65,536 x 9
Commercial
Com'l & Ind'l
Com'l & Military
Commercial
Com'l & Ind'l
IDT7203L12
IDT7203L15(2)
IDT7203L20
IDT7208L20
IDT7203L25(2)
IDT7204L12
IDT7204L15(2)
IDT7204L20
IDT7204L25(2)
IDT7205L12
IDT7205L15(2)
IDT7205L20
IDT7205L25(2)
IDT7206L15
IDT7206L20
IDT7206L25(3)
IDT7207L15
IDT7207L20
IDT7207L25(3)
IDT7208L25(3)
Symbol
Parameters
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
fS
ShiftFrequency
50
40
33.3
33.3
28.5
MHz
tRC
Read Cycle Time
20
25
30
30
35
ns
tA
Access Time
12
15
20
20
25
ns
tRR
Read Recovery Time
8
10
10
10
10
ns
tRPW
ReadPulseWidth(4)
12
15
20
20
25
ns
tRLZ
Read LOW to Data Bus LOW(5)
3—
5
5—
ns
tWLZ
Write HIGH to Data Bus Low-Z(5,6)
3—
5
5—
ns
tDV
Data Valid from Read HIGH
5
5
5
5
5
ns
tRHZ
Read HIGH to Data Bus High-Z(5)
—12
15
—15
15
—18
ns
tWC
Write Cycle Time
20
25
30
30
35
ns
tWPW
WritePulseWidth(4)
12
15
20
20
25
ns
tWR
WriteRecoveryTime
8
10
10
10
10
ns
tDS
DataSet-upTime
9
11
12
12
15
ns
tDH
DataHoldTime
0
0
0
0
0
ns
tRSC
Reset Cycle Time
20
25
30
30
35
ns
tRS
ResetPulseWidth(4)
12
15
20
20
25
ns
tRSS
ResetSet-upTime(5)
12
15
20
20
25
ns
tRTR
Reset Recovery Time
8
10
10
10
10
ns
tRTC
RetransmitCycleTime
20
25
30
30
35
ns
tRT
RetransmitPulseWidth(4)
12
15
20
20
25
ns
tRTS
RetransmitSet-upTime(5)
12
15
20
20
25
ns
tRTR
RetransmitRecoveryTime
8
10
10
10
10
ns
tEFL
Reset to EF LOW
—12
25
—30
30
—35
ns
tHFH,tFFH Reset to HF and FF HIGH
17
25
30
30
35
ns
tRTF
RetransmitLOWtoFlagsValid
20
25
30
30
35
ns
tREF
Read LOW to EF LOW
—12
15
—20
20
—25
ns
tRFF
Read HIGH to FF HIGH
14
15
20
20
25
ns
tRPE
Read Pulse Width after EF HIGH
12
15
20
20
25
ns
tWEF
Write HIGH to EF HIGH
12
15
20
20
25
ns
tWFF
Write LOW to FF LOW
—14
15
—20
20
—25
ns
tWHF
Write LOW to HF Flag LOW
17
25
30
30
35
ns
tRHF
Read HIGH to HF Flag HIGH
17
25
30
30
35
ns
tWPF
Write Pulse Width after FF HIGH
12
15
20
20
25
ns
tXOL
Read/Write LOW to XOLOW
—12
15
—20
20
—25
ns
tXOH
Read/Write HIGH to XO HIGH
12
15
20
20
25
ns
tXI
XI Pulse Width(4)
12
15
20
20
25
ns
tXIR
XI Recovery Time
8
10
10
10
10
ns
tXIS
XISet-up Time
8
10
10
10
10
ns
AC ELECTRICAL CHARACTERISTICS(1)
(Commercial: VCC = 5V ± 10%, TA = 0
°C to +70°C; Industrial: VCC = 5V ± 10%, TA = –40°C to +85°C; Military: VCC = 5V ± 10%, TA = –55°C to +125°C)
NOTES:
1. Timings referenced as in AC Test Conditions.
2. Industrial temperature range product for 15ns and 25ns speed grades are available as a standard device.
3. Industrial temperature range product for 25ns speed grade only is available as a standard device. All other speed grades are available by special order.
4. Pulse widths less than minimum are not allowed.
5. Values guaranteed by design, not currently tested.
6. Only applies to read data flow-through mode.
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