ABSOLUTE MAXIMUM RATINGS
參數(shù)資料
型號(hào): IDT72413L25P
廠商: IDT, Integrated Device Technology Inc
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 0K
描述: IC FIFO PAR W/FLAGS 32KB 20DIP
標(biāo)準(zhǔn)包裝: 18
系列: 7200
功能: 異步
存儲(chǔ)容量: 32K
數(shù)據(jù)速率: 25MHz
訪問(wèn)時(shí)間: 25ns
電源電壓: 4.5 V ~ 5.5 V
工作溫度: 0°C ~ 70°C
安裝類(lèi)型: 通孔
封裝/外殼: 20-DIP(0.300",7.62mm)
供應(yīng)商設(shè)備封裝: 20-PDIP
包裝: 管件
其它名稱(chēng): 72413L25P
2
IDT72413 CMOS PARALLEL FIFO WITH FLAGS
64 x 5
COMMERCIALTEMPERATURERANGE
JUNE 29, 2012
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
Commercial
Unit
VTERM
TerminalVoltagewith
–0.5 to +7.0
V
Respect to GND
TSTG
Storage
–55 to +125
° C
Temperature
IOUT
DC Output
–50 to +50
mA
Current
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDEDOPERATING
CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
4.5
5.0
5.5
V
Commercial
GND
Supply Voltage
0
V
VIH
Input High Voltage
2.0
V
VIL(1)
Input Low Voltage
0.8
V
TA
OperatingTemperature
0
70
° C
Commercial
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
CAPACITANCE
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter
Conditions
Max.
Unit
CIN
InputCapacitance
VIN = 0V
5
pF
COUT
OutputCapacitance
VOUT = 0V
7
pF
NOTE:
2748 tbl 02
1. Characterized values, not currently tested.
PLASTIC DIP (P20-1, ORDER CODE: P)
SOIC (SO20-2, ORDER CODE: SO)
TOP VIEW
5
6
7
8
9
10
HF
IR
SI
1
2
3
4
20
19
18
17
16
15
14
13
Vcc
12
11
OE
SO
D0
D1
D2
D3
AF/E
OR
Q0
Q1
Q2
Q3
D4
GND
Q4
MR
2748 drw 02
IDT72413
Commercial
fIN = 45, 35, 25 MHz
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
IIL
Low-Level Input Current
VCC = Max., GND
≤ VI ≤ VCC
–10
μ A
IIH
High-Level Input Current
VCC = Max., GND
≤ VI ≤ VCC
10
μA
VOL
Low-LevelOutputCurrent
VCC = Min.
IOL (Q0-4)
24 mA
0.4
V
IOL (IR, OR)(1)
8mA
IOL (HF, AF/E)
8mA
VOH
High-LevelOutputCurrent
VCC = Min.
IOH (Q0-4)
–4mA
2.4
V
IOH (IR, OR)
–4mA
IOH (HF, AF/E)
–4mA
IOS(2)
OutputShort-CircuitCurrent
VCC = Max. VO = 0V
–20
–110
mA
IHZ
HIGH Impedance Output Current
VCC = Max. VO = 2.4V
20
μ A
ILZ
LOW Impedance Output Current
VCC = Max. VO = 0.4V
–20
μ A
ICC(3,4)
Active Supply Current
VCC = Max., OE = HIGH
60
mA
Inputs LOW, f = 25MHz
NOTES:
1. Care should be taken to minimize as much as possible the DC and capactive load on IR and OR when operating at frequencies above 25MHz.
2. Not more than one output should be shorted at a time and duration of the short circuit should not exceed one second. Guaranteed by design, but not currently tested.
3. Tested with outputs open (IOUT = 0).
4. For frequencies greater than 25MHz, ICC = 60mA + (1.5mA x [f –25MHz])
DC ELECTRICAL CHARACTERISTICS
(Commercial: VCC = 5.0V ± 10%, TA = 0°C to +70°C)
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