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參數(shù)資料
| 型號(hào)： | IDT7284L20PA8 |
| 廠商： | IDT, Integrated Device Technology Inc |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC FIFO 2048X18 20NS 56TSSOP |
| 標(biāo)準(zhǔn)包裝： | 2,000 |
| 系列： | 7200 |
| 功能： | 異步 |
| 存儲(chǔ)容量： | 36.8K（2K x 18） |
| 訪問時(shí)間： | 20ns |
| 電源電壓： | 4.5 V ~ 5.5 V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 56-TFSOP（0.240"，6.10mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 56-TSSOP |
| 包裝： | 帶卷 (TR) |
| 其它名稱： | 7284L20PA8 |
1
CMOS DUAL ASYNCHRONOUS FIFO
DUAL 256 x 9, DUAL 512 x 9,
DUAL 1,024 x 9, DUAL 2,048 x 9,
DUAL 4,096 x 9, DUAL 8,192 x 9
IDT7280
IDT7281
IDT7282
IDT7283
IDT7284
IDT7285
JUNE 2012
IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc
COMMERCIALANDINDUSTRIALTEMPERATURERANGES
2012 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.
DSC-3208/9
FEATURES:
The IDT7280 is equivalent to two IDT7200 256 x 9 FIFOs
The IDT7281 is equivalent to two IDT7201 512 x 9 FIFOs
The IDT7282 is equivalent to two IDT7202 1,024 x 9 FIFOs
The IDT7283 is equivalent to two IDT7203 2,048 x 9 FIFOs
The IDT7284 is equivalent to two IDT7204 4,096 x 9 FIFOs
The IDT7285 is equivalent to two IDT7205 8,192 x 9 FIFOs
Low power consumption
— Active: 685 mW (max.)
— Power-down: 83 mW (max.)
Ultra high speed—12 ns access time
Asynchronous and simultaneous read and write
Offers optimal combination of data capacity, small foot print
and functional flexibility
Ideal for bi-directional, width expansion, depth expansion,
bus-matching, and data sorting applications
Status Flags: Empty, Half-Full, Full
Auto-retransmit capability
High-performance CMOS technology
Space-saving TSSOP
Industrial temperature range (–40
°°°°°C to +85°°°°°C) is available
DESCRIPTION:
The IDT7280/7281/7282/7283/7284/7285 are dual-FIFO memories that
loadandemptydataonafirst-in/first-outbasis.Thesedevicesarefunctional
andcompatibletotwoIDT7200/7201/7202/7203/7204/7205FIFOsinasingle
packagewithallassociatedcontrol,data,andflaglinesassignedtoseparate
pins. The devices use Full and Empty flags to prevent data overflow and
underflowandexpansionlogictoallowforunlimitedexpansioncapabilityinboth
word size and depth.
Thereadsandwritesareinternallysequentialthroughtheuseofringpointers,
withnoaddressinformationrequiredtoloadandunloaddata.Dataistoggled
in and out of the devices through the use of the Write (W) and Read (R) pins.
Thedevicesutilizea9-bitwidedataarraytoallowforcontrolandparitybits
attheuser’soption.Thisfeatureis especiallyusefulindatacommunications
applicationswhereitisnecessarytouseaparitybitfortransmission/reception
errorchecking.ItalsofeaturesaRetransmit(RT)capabilitythatallowsforreset
of the read pointer to its initial position when RT is pulsed LOW to allow for
retransmissionfromthebeginningofdata.AHalf-FullFlagisavailableinthe
single device mode and width expansion modes.
TheseFIFOsarefabricatedusinghigh-speedCMOStechnology.Theyare
designed for those applications requiring asynchronous and simultaneous
read/writesinmultiprocessingandratebufferapplications.
FUNCTIONAL BLOCK DIAGRAM
WA
WRITE
CONTROL
READ
CONTROL
RA
FLAG
LOGIC
EXPANSION
LOGIC
XIA
WRITE
POINTER
READ
POINTER
DATA INPUTS
RESET
LOGIC
THREE-
STATE
BUFFERS
DATA
OUTPUTS
RSA
FLA/RTA
XOA/HFA
FFA
EFA
WB
WRITE
CONTROL
READ
CONTROL
RB
FLAG
LOGIC
EXPANSION
LOGIC
XIB
WRITE
POINTER
RAM
ARRAY B
256 x 9
512 x 9
1,024 x 9
2,048 x 9
4,096 x 9
8,192 x 9
READ
POINTER
DATA INPUTS
RESET
LOGIC
THREE-
STATE
BUFFERS
DATA
OUTPUTS
RSB
FLB/RTB
3208 drw 01
XOB/HFB
FFB
EFB
(DA0-DA8)
(DB0-DB8)
(QB0-QB8)
(QA0-QA8)
RAM
ARRAY A
256 x 9
512 x 9
1,024 x 9
2,048 x 9
4,096 x 9
8,192 x 9
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