參數(shù)資料
型號(hào): IDT72V255LA10TFG8
廠商: IDT, Integrated Device Technology Inc
文件頁(yè)數(shù): 11/27頁(yè)
文件大?。?/td> 0K
描述: IC FIFO SS 8192X18 10NS 64-STQFP
標(biāo)準(zhǔn)包裝: 1,250
系列: 72V
功能: 同步
存儲(chǔ)容量: 144K(8K x 18)
訪問(wèn)時(shí)間: 10ns
電源電壓: 3 V ~ 3.6 V
工作溫度: 0°C ~ 70°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 64-LQFP
供應(yīng)商設(shè)備封裝: 64-TQFP(10x10)
包裝: 帶卷 (TR)
其它名稱: 72V255LA10TFG8
19
IDT72V255LA/72V265LA 3.3 VOLT CMOS SuperSync FIFO
8,192 x 18, 16,384 x 18
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
OCTOBER 22, 2008
Figure
10.
Read
Timing
(First
Word
Fall
Through
Mode)
NOTES:
1.
t
SKEW1
is
the
minimum
time
between
a
rising
RCLK
edge
and
a
rising
WCLK
edge
to
guarantee
that
IR
will
go
LOW
after
one
WCLK
cycle
plus
t
WFF
.If
the
time
between
the
rising
edge
of
RCLK
and
the
rising
edge
of
WCLK
is
less
than
t
SKEW1
,then
the
IR
assertion
may
be
delayed
one
extra
WCLK
cycle.
2.
tSKEW2
is
the
minimum
time
between
a
rising
RCLK
edge
and
a
rising
WCLK
edge
to
guarantee
that
PAF
will
go
HIGH
after
one
WCLK
cycle
plus
t
PAF
.If
the
time
between
the
rising
edge
of
RCLK
and
the
rising
edge
of
WCLK
is
less
than
t
SKEW2
,then
the
PAF
deassertion
may
be
delayed
one
extra
WCLK
cycle.
3.
LD
=
HIGH
4
.
n
=
PAE
Offset,
m
=
PAF
offset
and
D
=
maximum
FIFO
depth.
5.
D
=
8,193
for
IDT72V255LA
and
16,385
for
IDT72V265LA.
WCLK
12
WEN
D
0
-
D
17
RCLK
tENS
REN
Q
0
-Q
17
PAF
HF
PAE
IR
OR
W
1
W
1
W
2
W
3
W
m+2
W
[m+3]
tOHZ
tSKEW1
tENH
tDS
tDH
tOE
tA
tPAF
tWFF
tENS
OE
tSKEW2
W
D
4672
drw
13
tPAE
W
[D-n]
W
[D-n-1]
tA
tHF
tREF
W
[D-1]
W
D
tA
W
[D-n+1]
W
[m+4]
W
[D-n+2]
(1)
(2)
tENS
D-1
+
1 ]
[
W
2
D-1
+
2 ]
[
W
2
1
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