IDT72V275/72V285 3.3V CMOS SUPERSYNC FIFOTM 32,768 x 18" />
參數(shù)資料
型號(hào): IDT72V285L20TF8
廠商: IDT, Integrated Device Technology Inc
文件頁數(shù): 8/25頁
文件大?。?/td> 0K
描述: IC FIFO SS 65536X18 20NS 64STQFP
標(biāo)準(zhǔn)包裝: 1,250
系列: 72V
功能: 異步
存儲(chǔ)容量: 1.1M(65K x 18)
數(shù)據(jù)速率: 50MHz
訪問時(shí)間: 20ns
電源電壓: 3 V ~ 3.6 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 64-LQFP
供應(yīng)商設(shè)備封裝: 64-TQFP(10x10)
包裝: 帶卷 (TR)
其它名稱: 72V285L20TF8
16
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72V275/72V285 3.3V CMOS SUPERSYNC FIFOTM
32,768 x 18 and 65,536 x 18
Figure 8. Read Cycle, Empty Flag and First Data Word Latency Timing (IDT Standard Mode)
NOTES:
1. tSKEW3 is the minimum time between a rising WCLK edge and a rising RCLK edge to guarantee that
EF will go HIGH (after one RCLK cycle plus tREF). If the time between the rising edge
of WCLK and the rising edge of RCLK is less than tSKEW3, then
EF deassertion may be delayed one extra RCLK cycle.
2.
LD = HIGH.
3. First word latency: 60ns + tREF + 1*TRCLK.
NOTES:
1. tSKEW1 is the minimum time between a rising RCLK edge and a rising WCLK edge to guarantee that
FF will go high (after one WCLK cycle pus tWFF). If the time between the rising
edge of the RCLK and the rising edge of the WCLK is less than tSKEW1, then the
FF deassertion may be delayed one extra WCLK cycle.
2.
LD = HIGH, OE = LOW, EF = HIGH.
Figure 7. Write Cycle and Full Flag Timing (IDT Standard Mode)
NO OPERATION
RCLK
REN
4512 drw 11
EF
tCLK
tCLKH
tCLKL
tENH
tREF
tA
tOLZ
tOE
Q0 - Qn
OE
WCLK
(1)
tSKEW3
WEN
D0 - Dn
tENS
tENH
tDS
tDHS
D0
1
2
tOLZ
NO OPERATION
LAST WORD
D0
D1
tENS
tENH
tDS
tDH
tOHZ
LAST WORD
tREF
tENH
tENS
tA
tREF
tENS
tENH
D0 - Dn
WEN
RCLK
REN
tENH
Q0 - Qn
DATA READ
NEXT DATA READ
DATA IN OUTPUT REGISTER
tSKEW1
(1)
4512 drw 10
WCLK
NO WRITE
1
2
1
2
tDS
NO WRITE
tWFF
tA
tENS
tSKEW1
(1)
tDS
tA
D X
tDH
tCLK
tCLKH
tCLKL
DX+1
tWFF
tDH
FF
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