參數(shù)資料
型號(hào)： IDT74FCT823CPB
廠商： Integrated Device Technology, Inc.
英文描述： HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
中文描述： 高性能CMOS總線接口寄存器
文件頁數(shù)： 4/8頁
文件大?。?/td> 186K
代理商： IDT74FCT823CPB
7.19
4
IDT54/74FCT821/823/824/825A/B/C
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS
(1)
CAPACITANCE
(T
A
= +25
°
C, f = 1.0MHz)
NOTE:
1. This parameter is measured at characterization but not tested.
2608 tbl 05
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: V
LC
= 0.2V; V
HC
= V
CC
– 0.2V
Commercial: T
A
= 0
°
C to +70
°
C, V
CC
= 5.0V
±
5%; Military: T
A
= –55
°
C to +125
°
C, V
CC
= 5.0V
±
10%
Symbol
Parameter
V
IH
Input HIGH Level
Guaranteed Logic HIGH Level
V
IL
Input LOW Level
Guaranteed Logic LOW Level
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
°
C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. This parameter is guaranteed but not tested.
2608 tbl 06
Symbol
C
IN
Parameter
(1)
Input
Capacitance
Output
Capacitance
Conditions
V
IN
= 0V
Typ.
6
Max.
10
Unit
pF
C
OUT
V
OUT
= 0V
8
12
pF
Symbol
V
TERM(2)
Terminal Voltage
with Respect to
GND
V
TERM(3)
Terminal Voltage
with Respect to
GND
T
A
Operating
Temperature
T
BIAS
Temperature
Under Bias
T
STG
Storage
Temperature
P
T
Power Dissipation
I
OUT
DC Output
Current
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage
may exceed V
CC
by +0.5V unless otherwise noted.
2. Input and V
CC
terminals only.
3. Outputs and I/O terminals only.
Rating
Commercial
–0.5 to +7.0
Military
–0.5 to +7.0
Unit
V
–0.5 to V
CC
–0.5 to V
CC
V
0 to +70
–55 to +125
°
C
–55 to +125
–65 to +135
°
C
–55 to +125
–65 to +150
°
C
0.5
120
0.5
120
W
mA
Test Conditions
(1)
Min.
2.0
—
Typ.
(2)
—
—
Max.
—
0.8
Unit
V
V
μ
A
I
I H
Input HIGH Current
V
CC
= Max.
V
I
= V
CC
V
I
= 2.7V
V
I
= 0.5V
V
I
= GND
—
—
—
—
—
—
—
—
5
5
(4)
–5
(4)
–5
I
I L
Input LOW Current
I
OZH
Off State (High Impedance)
Output Current
V
CC
= Max.
V
O
= V
CC
V
O
= 2.7V
V
O
= 0.5V
—
—
—
—
—
—
10
μ
A
10
(4)
–10
(4)
I
OZL
V
O
= GND
—
—
–75
—
–0.7
–120
–10
–1.2
—
V
IK
I
OS
Clamp Diode Voltage
Short Circuit Current
V
CC
= Min., I
N
= –18mA
V
CC
= Max.
(3)
, V
O
= GND
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OH
= –32
μ
A
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
mA
V
OH
Output HIGH Voltage
V
HC
V
HC
2.4
V
CC
V
CC
4.3
—
—
—
V
I
OH
= –300
μ
A
I
OH
= –15mA MIL.
I
OH
= –24mA COM'L.
2.4
—
—
4.3
GND
GND
—
V
LC
V
LC(4)
V
OL
Output LOW Voltage
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OL
= 300
μ
A
V
CC
= Min.
V
I
OL
= 300
μ
A
I
OL
= 32mA MIL.
I
OL
= 48mA COM'L.
V
IN
= V
IH
or V
IL
—
—
0.3
0.3
0.5
0.5
2608 tbl 04
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PDF描述
IDT74FCT823CSO Tantalum Electrolytic Capacitor; Capacitance:0.22uF; Capacitance Tolerance:+/- 10 %; Working Voltage, DC:125V; Package/Case:A; Terminal Type:Axial Leaded; ESR:16ohm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
IDT74FCT823CSOB HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
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