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參數(shù)資料
| 型號： | IDT74FCT825CTEB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS |
| 中文描述： | 高性能CMOS總線接口寄存器 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 178K |
| 代理商： | IDT74FCT825CTEB |
IDT54/74FCT821AT/BT/CT, 823/825AT/BT/CT/DT
HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.21
4
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: T
A
= 0
°
C to +70
°
C, V
CC
= 5.0V
±
5%; Military: T
A
= –55
°
C to +125
°
C, V
CC
= 5.0V
±
10%
Symbol
Parameter
V
IH
Input HIGH Level
Guaranteed Logic HIGH Level
V
IL
Input LOW Level
Guaranteed Logic LOW Level
Input HIGH Current
(4)
V
CC
= Max.
I
I L
Input LOW Current
(4)
I
OZH
High Impedance Output Current
V
CC
= Max.
I
OZL
(3-State Output pins)
(4)
Input HIGH Current
(4)
V
CC
= Max., V
I
= V
CC
(Max.)
V
IK
Clamp Diode Voltage
V
CC
= Min., I
IN
= –18mA
V
H
Input Hysteresis
—
I
CC
Quiescent Power Supply Current
V
CC
= Max., V
IN
= GND or V
CC
Test Conditions
(1)
Min.
2.0
—
Typ.
(2)
—
—
Max.
—
0.8
±
1
±
1
±
1
±
1
±
1
–1.2
—
1
Unit
V
V
μ
A
I
I H
V
I
= 2.7V
V
I
= 0.5V
V
O
= 2.7V
V
O
= 0.5V
—
—
—
—
—
—
—
—
μ
A
I
I
—
—
—
—
—
–0.7
200
0.01
μ
A
V
mV
mA
2567 lnk 05
OUTPUT DRIVE CHARACTERISTICS FOR FCT821/823/825T
Symbol
V
OH
Parameter
Test Conditions
(1)
Min.
2.4
Typ.
(2)
3.3
Max.
—
Unit
V
Output HIGH Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= –6mA MIL.
I
OH
= –8mA COM'L.
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L.
I
OL
= 32mA MIL.
I
OL
= 48mA COM'L.
2.0
3.0
—
V
V
OL
Output LOW Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
V
CC
= Max., V
O
= GND
(3)
V
CC
= 0V, V
IN
or V
O
≤
4.5V
—
0.3
0.5
V
I
OS
I
OFF
Short Circuit Current
Input/Output Power Off Leakage
(5)
–60
—
–120
—
–225
±
1
mA
μ
A
2567 lnk 06
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25
°
C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is
±
5
μ
A at T
A
= –55
°
C.
5. This parameter is guaranteed but not tested.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT74FCT827ATP | 制造商:Integrated Device Technology Inc 功能描述: |
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| IDT74FCT827ATSO | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT74FCT827BTPY | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Integrated Device Technology Inc 功能描述: |
| IDT74FCT827CTP | 制造商:Integrated Device Technology Inc 功能描述: |
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